Datasheet > NP29N06QUK-E2-AY

NP29N06QUK-E2-AY

更新时间： 2024-02-14 07:33:54

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
9页	622K
描述
60 V â 30 A â Dual N-channel Power MOS FET

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NP29N06QUK-E2-AY 数据手册

Data Sheet

NP29N06QUK

60 V – 30 A – Dual N-channel Power MOS FET

Application: Automotive

R07DS1331EJ0100

Rev.1.00

Mar 28, 2016

Description

NP29N06QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

•

Super low on-state resistance

⎯ R_DS(on)= 21 mΩ MAX. (V_GS= 10 V, I_D= 15 A)

Low C_iss: C_iss= 1000 pF TYP. (V_DS= 25 V)

Designed for automotive application and AEC-Q101 qualified

Small size package 8-pin HSON dual

•

Outline

Drain 1

Drain 2

Body

Diode

Body

Diode

Gate 1

Gate 2

Source 1

Source 2

8-pin HSON dual

Equivalent circuit

Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity

as much as possible, and quickly dissipate it once, when it has occurred.

Ordering Information

Part No.

NP29N06QUK-E1-AY ^*

NP29N06QUK -E2-AY ^*

Lead Plating

Pure Sn (Tin)

Packing

Taping (E1 type)

Taping (E2 type)

Package

Tape 2500 p/reel

8-pin HSON dual

Note: *1. Pb-free (This product does not contain Pb in the external electrode)

R07DS1331EJ0100 Rev.1.00

Mar 28, 2016

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