NP0G3D2

更新时间： 2024-02-04 14:43:00

品牌	Logo	应用领域
松下 - PANASONIC		晶体小信号双极晶体管开关光电二极管
页数	文件大小	规格书
5页	112K
描述
Silicon PNP(NPN) epitaxial planar transistor (Tr1,2)

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

NP0G3D2 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.82
Is Samacsys：	N	其他特性：	BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：	0.08 A	集电极-发射极最大电压：	50 V
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	20
JESD-30 代码：	R-PDSO-F6	JESD-609代码：	e6
湿度敏感等级：	1	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN AND PNP
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	Tin/Bismuth (Sn/Bi)	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	150 MHz	Base Number Matches：	1

NP0G3D2 数据手册

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government

if any of the products or technologies described in this material and controlled under the "Foreign

Exchange and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteris-

tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-

tual property right or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the

product or technologies as described in this material.

(4) The products described in this material are intended to be used for standard applications or general

electronic equipment (such as office equipment, communications equipment, measuring instru-

ments and household appliances).

Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,

combustion equipment, life support systems and safety devices) in which exceptional quality and

reliability are required, or if the failure or malfunction of the products may directly jeopardize life or

harm the human body.

• Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without

notice for modification and/or improvement. At the final stage of your design, purchasing, or use of

the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that

the latest specifications satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-

mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-

wise, we will not be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of

incidence of break down and failure mode, possible to occur to semiconductor products. Measures

on the systems such as redundant design, arresting the spread of fire or preventing glitch are

recommended in order to prevent physical injury, fire, social damages, for example, by using the

products.

(7) When using products for which damp-proof packing is required, observe the conditions (including

shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets

are individually exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL

1 2 3 45

下载PDF

与NP0G3D2相关器件

型号	品牌	描述	获取价格	数据表
NP0G3D3	ETC	Composite Device - Transistors with built-in Resistor	获取价格
NP0H3A3	PANASONIC	Silicon PNP epitaxial planar type (Tr1), Silicon NPN epitaxial planar type (Tr2)	获取价格
NP0J1A3	PANASONIC	Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS C	获取价格
NP1.2-12	ETC	BLEIAKKU 12V 600G	获取价格
NP1.2-6	ETC	BLEIAKKU 6V 340G	获取价格
NP10	ETC	CABLE CLEAT Inhalt pro Packung: 25 Stk.	获取价格

与NP0G3D2相关文章

TLP250光耦合器：资料手册参数分析
2024-05-09

4
DA14580 低功耗蓝牙系统级芯片(SoC)：资料手册参数分析
2024-05-09

6
INA226 高精度电流和功率监控器：资料手册参数分析
2024-05-09

5
SI2302 N沟道MOSFET：资料手册参数分析
2024-05-09

8

产品中心

服务支持

精选活动

关于我们

帮助中心

NP0G3D2

NP0G3D2 技术参数

NP0G3D2 数据手册

与NP0G3D2相关器件

与NP0G3D2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NP0G3D2

NP0G3D2 技术参数

NP0G3D2 数据手册

与NP0G3D2相关器件

与NP0G3D2相关文章

您还可以找

您在本页遇到什么问题？