Datasheet > 触发装置 > 硅浪涌保护器> NP0720SDMCT3G

NP0720SDMCT3G

更新时间： 2024-01-21 13:15:22

品牌	Logo	应用领域
安森美 - ONSEMI		触发装置硅浪涌保护器光电二极管
页数	文件大小	规格书
6页	124K
描述
High Current TSPD

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技术参数
数据手册

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NP0720SDMCT3G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-214	包装说明：	ROHS COMPLIANT, CASE 403C-01, SMB, 2 PIN
针数：	2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.30.00.80
风险等级：	5.78	Is Samacsys：	N
其他特性：	UL RECOGNIZED	最大转折电压：	88 V
配置：	SINGLE	最大断态直流电压：	65 V
JEDEC-95代码：	DO-214AA	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3	湿度敏感等级：	1
通态非重复峰值电流：	60 A	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	触发设备类型：	SILICON SURGE PROTECTOR
Base Number Matches：	1

NP0720SDMCT3G 数据手册

NP−SDMC Series

The electrical characteristics of the TSPD help the user to

define the protection threshold for the circuit. During the

open circuit condition the device must remain transparent;

TSPD’s are useful in helping designers meet safety and

regulatory standards in Telecom equipment including

GR−1089−CORE,ITU−K.20, ITU−K.21, ITU−K.45, FCC

Part 68, UL1950, and EN 60950.

this is defined by the I

. The I

should be as low as

DRM

possible. The typical value is less than 5 mA.

The circuit operating voltage and protection voltage must

be understood and considered during circuit design. The

ON Semiconductor offers a full range of these products in

the NP series product line.

DEVICE SELECTION

When selecting a TSPD use the following key selection

parameters.

(BO)

is the guaranteed maximum voltage that the protected

circuit will see, this is also known as the protection voltage.

The V is the guaranteed maximum voltage that will

DRM

keep the TSPD in its normal open circuit state. The TSPD

is typically a 20−30% higher than the V . Based

Off−State Voltage V_DRM

(BO)

DRM

Choose a TSPD that has an Off−State Voltage greater than

the normal system operating voltage. The protector should

not operate under these conditions:

Example:

on these characteristics it is critical to choose devices which

have a V higher than the normal circuit operating

DRM

voltage, and a V

which is less than the failure threshold

(BO)

of the protected equipment circuit. A low on−state voltage

Vbat = 48 Vmax

V allows the TSPD to conduct large amounts of surge

Vring = 150 Vrms = 150*1.414 = 212 V peak

current (500 A) in a small package size.

Once a transient surge has passed and the operating

voltage and currents have dropped to their normal level the

TSPD changes back to its open circuit state.

should be greater than the peak value of these two

DRM

components:

V_DRM> 212 + 48 = 260 V_DRM

Transient Surge

Breakover Voltage V_(BO)

Verify that the TSPD Breakover Voltage is a value less

than the peak voltage rating of the circuit it is protecting.

Example: Relay breakdown voltage, SLIC maximum

voltage, or coupling capacitor maximum rated voltage.

Equipment Failure Threshold

TSPD Protection Voltage

Upper Limit

Peak Pulse Current Ipps

Choose a Peak Pulse current value which will exceed the

anticipated surge currents in testing.

Normal System

Operating Voltage

Hold Current (I_H)

TSPD Transparent

(open)

TSPD Protection

(short)

TSPD Transparent

(open)

The Hold Current must be greater than the maximum

system generated current. If it is not then the TSPD will

remain in a shorted condition, even after a transient event

has passed.

Time

Figure 5. Protection During a Transient Surge

http://onsemi.com

1 2 345 6

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