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NKT11014 PDF预览

NKT11014

更新时间: 2024-01-16 04:56:49
品牌 Logo 应用领域
尼尔 - NELLSEMI /
页数 文件大小 规格书
4页 732K
描述
Thyristor/Diode Power Modules

NKT11014 数据手册

 浏览型号NKT11014的Datasheet PDF文件第1页浏览型号NKT11014的Datasheet PDF文件第2页浏览型号NKT11014的Datasheet PDF文件第3页 
RoHS  
NKT110/NKH110 Series  
Nell High Power Products  
Fig.1 Peak On-state voltage vs. peak On-state  
current  
Fig.2 Max. thermal impedance (junction to case)  
vs. time  
2
0.3  
1.8  
1.6  
1.4  
1.2  
1
0.25  
0.2  
0.15  
0.1  
0.05  
0
TJ = 125°C  
0.8  
0.6  
10  
100  
1000  
0.001  
0.01  
0.1  
1
10  
Peak on-state current (A)  
Time (s)  
Fig.3 Power dissipation vs. average on-state  
current  
Fig.4 Case temperature vs. average  
on-state current  
300  
250  
200  
150  
100  
50  
140  
120  
100  
80  
180°  
180°  
0
180°  
0
120°  
90°  
Conduction Angle  
60°  
Conduction Angle  
30°  
60  
40  
120°  
30°  
60° 90°  
180°  
20  
0
0
0
30  
60  
90  
120  
150  
0
50  
100  
150  
200  
On-state average current (A)  
Average on-state current (A)  
Fig.5 Surge on-state current vs. cycles  
Fig.6 Gate characteristics  
2.4  
2.2  
2
2
Peak Forward Gate Voltage (10V)  
¹
10  
P
e
a
P
A
k G  
v
o
w
e
r
a
e
a
5
t
r (  
g
e
e G  
1
0
1.8  
1.6  
1.4  
1.2  
1
w
a
)
t
e P  
o
w
e
r (  
2
3
w
)
º
10  
-40°C  
5
25°C  
125°C  
0.8  
0.6  
0.4  
2
Maximum Gate Voltage that will not trigger any unit  
-1  
10  
²
³
10  
¹
2
5
2
5
2
5
10  
10  
1
10  
100  
Gate current (mA)  
Time (cycles)  
Apr 2017  
Page 4 of 4  
www.nellsemi.com  

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