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NCV20091SN3T1G PDF预览

NCV20091SN3T1G

更新时间: 2024-11-20 00:59:03
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管
页数 文件大小 规格书
20页 685K
描述
Operational Amplifier, Rail-to-Rail Input

NCV20091SN3T1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SOT-23, TSOP-5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
Factory Lead Time:4 weeks风险等级:1.44
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.0015 µA最小共模抑制比:53 dB
标称共模抑制比:76 dB频率补偿:NO
最大输入失调电流 (IIO):0.0011 µA最大输入失调电压:4000 µV
JESD-30 代码:R-PDSO-G5长度:3 mm
低-偏置:YES低-失调:NO
微功率:YES功能数量:1
端子数量:5最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSOP封装等效代码:TSOP5/6,.11,37
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED可编程功率:NO
筛选级别:AEC-Q100座面最大高度:1.1 mm
标称压摆率:0.15 V/us子类别:Operational Amplifier
最大压摆率:0.033 mA供电电压上限:6 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:350 kHz最小电压增益:4466.836
宽带:NO宽度:1.5 mm
Base Number Matches:1

NCV20091SN3T1G 数据手册

 浏览型号NCV20091SN3T1G的Datasheet PDF文件第2页浏览型号NCV20091SN3T1G的Datasheet PDF文件第3页浏览型号NCV20091SN3T1G的Datasheet PDF文件第4页浏览型号NCV20091SN3T1G的Datasheet PDF文件第5页浏览型号NCV20091SN3T1G的Datasheet PDF文件第6页浏览型号NCV20091SN3T1G的Datasheet PDF文件第7页 
NCS20091, NCV20091,  
NCS20092, NCV20092,  
NCS20094, NCV20094  
Operational Amplifier,  
Rail-to-Rail Input and  
Output, 350 kHz  
www.onsemi.com  
The NCS2009 series operational amplifiers provide rail−to−rail  
input and output operation, 350 kHz bandwidth, and are available in  
single, dual, and quad configurations. Rail−to−rail operation gives  
designers use of the entire supply voltage range while taking  
advantage of the 350 kHz bandwidth. The NCS2009 can operate on  
supply voltages from 1.8 to 5.5 V over a temperature range from  
−40°C to 125°C. At a 1.8 V supply, this device has a slew rate of 0.15  
V/ms while consuming only 20 mA of quiescent current per channel.  
Since this is a CMOS device, high input impedance and low bias  
currents make it ideal for interfacing to a wide variety of signal  
sensors. The NCS2009 devices are available in a variety of compact  
packages.  
5
1
SC70−5  
CASE 419A  
TSOP−5/SOT23−5  
CASE 483  
8
1
Micro8]/MSOP8  
SOIC−8  
CASE 751  
CASE 846A  
Features  
Rail−to−Rail Input and Output  
Wide Supply Range: 1.8 to 5.5 V  
Wide Bandwidth: 350 kHz  
14  
1
Slew Rate: 0.15 V/ms at V = 1.8 V  
S
TSSOP−14  
CASE 948G  
TSSOP−8  
CASE 948S  
Low Supply Current: 20 mA per Channel at V = 1.8 V  
S
Low Input Bias Current: 1 pA Typical  
Wide Temperature Range: −40°C to 125°C  
Available in a Variety of Packages  
NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q100  
Qualified and PPAP Capable  
6
14  
1
1
SOIC−14  
CASE 751A  
UDFN6  
CASE 517AP  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
DEVICE MARKING INFORMATION  
See general marking information in the device marking  
section on page 2 of this data sheet.  
Applications  
Unity Gain Buffer  
Battery Powered / Low Quiescent Current Applications  
Low Cost Current Sensing  
Automotive  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 3 of  
this data sheet.  
This document contains information on some products that are still under development.  
ON Semiconductor reserves the right to change or discontinue these products without  
notice.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
August, 2016 − Rev. 4  
NCS2009/D  

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