Datasheet > N04L1630C2BB2-70I

N04L1630C2BB2-70I

更新时间： 2024-02-01 18:12:43

品牌	Logo	应用领域
AMI		静态存储器内存集成电路
页数	文件大小	规格书
12页	194K
描述
Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, GREEN, BGA - 48

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N04L1630C2BB2-70I 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	GREEN, BGA - 48	Reach Compliance Code：	unknown
风险等级：	5.79	最长访问时间：	70 ns
JESD-30 代码：	R-PBGA-B48	JESD-609代码：	e1
长度：	8 mm	内存密度：	4194304 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	16
功能数量：	1	端子数量：	48
字数：	262144 words	字数代码：	256000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	256KX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	LFBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	1.34 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	TIN SILVER COPPER	端子形式：	BALL
端子节距：	0.75 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	40	宽度：	6 mm
Base Number Matches：	1

N04L1630C2BB2-70I 数据手册

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AMI Semiconductor, Inc.

N04L1630C2B

ULP Memory Solutions

670 North McCarthy Blvd. Suite 220

Milpitas, CA 95035

Advance Information

PH: 408-935-7777, FAX: 408-935-7770

4Mb Ultra-Low Power Asynchronous CMOS SRAMs

256K × 16 bit POWER SAVER TECHNOLOGY ^TM

Overview

Features

The N04L1630C2B is an integrated memory

device containing a 4 Mbit Static Random Access

Memory organized as 262,144 words by 16 bits.

The device is designed and fabricated using AMI

Semiconductor’s advanced CMOS technology to

provide both high-speed performance and ultra-low

power. The device operates with two chip enable

(CE1 and CE2) controls and output enable (OE) to

allow for easy memory expansion. Byte controls

(UB and LB) allow the upper and lower bytes to be

accessed independently and can also be used to

deselect the device. The N04L1630C2B is

• Wide Power Supply Range

2.7 to 3.6 Volts

• Very low standby current

1uA (Typical)

• Very low operating current

2.0mA at 1µs (Typical)

• Very low Page Mode operating current

0.8mA at 1µs (Typical)

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

optimized for the ultimate in low power and is

suited for various applications where ultra-low-

power is critical such as medical applications,

battery backup and power sensitive hand-held

devices. The unique page mode operation saves

operating power while improving the performance

over standard SRAMs. The device can operate

• Very fast output enable access time

30ns OE Access Time

55ns Random Access Time

30ns Page Mode Access Time

• Automatic power down to standby mode

• TTL compatible three-state output driver

• RoHS Compliant TSOP and BGA packages

over a very wide temperature range of -40 C to

+85 C and is available in JEDEC standard

packages compatible with other standard 256Kb x

16 SRAMs.

Product Family

Standby

Operating

Current (Icc),

Typical

Operating

Power

Speed

Current (I_SB),

Part Number

Package Type

Temperature Supply (Vcc) Options

Typical

N04L1630C2BB2 48-BGA Green

N04L1630C2BT2 44-TSOP II Green

55ns

70ns

-40^oC to +85^oC

2.7V - 3.6V

1µA

2 mA @ 1MHz

(DOC# 14-02-042 ReI I ECN# 01-1374

The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.

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与N04L1630C2BB2-70I相关器件

型号	品牌	描述	获取价格	数据表
N04L1630C2BT2	AMI	4Mb Ultra-Low Power Asynchronous CMOS SRAMs 2	获取价格
N04L1630C2BT2-55I	AMI	Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, GREEN, TSOP2 - 44	获取价格
N04L1630C2BT2-70I	AMI	Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, GREEN, TSOP2 - 44	获取价格
N04L1630C2BT-55I	NANOAMP	Standard SRAM, 256KX16, 55ns, CMOS, PDSO44	获取价格
N04L1630C2BT-85I	NANOAMP	Standard SRAM, 256KX16, 85ns, CMOS, PDSO44	获取价格
N04L163WC1A	NANOAMP	4Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格

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