5秒后页面跳转
N04L1630C2BT2 PDF预览

N04L1630C2BT2

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
AMI 静态存储器
页数 文件大小 规格书
12页 194K
描述
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM

N04L1630C2BT2 数据手册

 浏览型号N04L1630C2BT2的Datasheet PDF文件第2页浏览型号N04L1630C2BT2的Datasheet PDF文件第3页浏览型号N04L1630C2BT2的Datasheet PDF文件第4页浏览型号N04L1630C2BT2的Datasheet PDF文件第5页浏览型号N04L1630C2BT2的Datasheet PDF文件第6页浏览型号N04L1630C2BT2的Datasheet PDF文件第7页 
AMI Semiconductor, Inc.  
N04L1630C2B  
ULP Memory Solutions  
670 North McCarthy Blvd. Suite 220  
Milpitas, CA 95035  
Advance Information  
PH: 408-935-7777, FAX: 408-935-7770  
4Mb Ultra-Low Power Asynchronous CMOS SRAMs  
256K × 16 bit POWER SAVER TECHNOLOGY TM  
Overview  
Features  
The N04L1630C2B is an integrated memory  
device containing a 4 Mbit Static Random Access  
Memory organized as 262,144 words by 16 bits.  
The device is designed and fabricated using AMI  
Semiconductor’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The device operates with two chip enable  
(CE1 and CE2) controls and output enable (OE) to  
allow for easy memory expansion. Byte controls  
(UB and LB) allow the upper and lower bytes to be  
accessed independently and can also be used to  
deselect the device. The N04L1630C2B is  
• Wide Power Supply Range  
2.7 to 3.6 Volts  
• Very low standby current  
1uA (Typical)  
• Very low operating current  
2.0mA at 1µs (Typical)  
• Very low Page Mode operating current  
0.8mA at 1µs (Typical)  
• Simple memory control  
Dual Chip Enables (CE1 and CE2)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
optimized for the ultimate in low power and is  
suited for various applications where ultra-low-  
power is critical such as medical applications,  
battery backup and power sensitive hand-held  
devices. The unique page mode operation saves  
operating power while improving the performance  
over standard SRAMs. The device can operate  
• Very fast output enable access time  
30ns OE Access Time  
55ns Random Access Time  
30ns Page Mode Access Time  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• RoHS Compliant TSOP and BGA packages  
o
over a very wide temperature range of -40 C to  
o
+85 C and is available in JEDEC standard  
packages compatible with other standard 256Kb x  
16 SRAMs.  
Product Family  
Standby  
Operating  
Current (Icc),  
Typical  
Operating  
Power  
Speed  
Current (ISB),  
Part Number  
Package Type  
Temperature Supply (Vcc) Options  
Typical  
N04L1630C2BB2 48-BGA Green  
N04L1630C2BT2 44-TSOP II Green  
55ns  
70ns  
-40oC to +85oC  
2.7V - 3.6V  
1µA  
2 mA @ 1MHz  
(DOC# 14-02-042 ReI I ECN# 01-1374  
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.  
1

与N04L1630C2BT2相关器件

型号 品牌 描述 获取价格 数据表
N04L1630C2BT2-55I AMI Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, GREEN, TSOP2 - 44

获取价格

N04L1630C2BT2-70I AMI Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, GREEN, TSOP2 - 44

获取价格

N04L1630C2BT-55I NANOAMP Standard SRAM, 256KX16, 55ns, CMOS, PDSO44

获取价格

N04L1630C2BT-85I NANOAMP Standard SRAM, 256KX16, 85ns, CMOS, PDSO44

获取价格

N04L163WC1A NANOAMP 4Mb Ultra-Low Power Asynchronous CMOS SRAM

获取价格

N04L163WC1AB NANOAMP 4Mb Ultra-Low Power Asynchronous CMOS SRAM

获取价格