Datasheet > N0301P-T1-AT

N0301P-T1-AT

更新时间： 2022-11-26 22:37:52

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	254K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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数据手册

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N0301P-T1-AT 数据手册

N0301P

DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS

DRAIN TO SOURCE VOLTAGE

-20

-18

-16

-14

-12

-10

-8

-100

-10

DS = –10 V

Pulsed

GS = –4.5 V

-1

-0.1

–2.5 V

= –25°C

25°C

75°C

125°C

-0.01

-0.001

-0.0001

-6

-4

-2

-1

-2

-3

-4

-5

-1

-2

-3

-4

V^DS- Drain to Source Voltage - V

V^GS- Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

-2

100

DS = –10 V

= –1 mA

DS = –10 V

Pulsed

-1.5

T = –25°C

-1

-0.5

125

0.1

0.01

-50

100

150

-0.01

-0.1

-1

-10

-100

ID - Drain Current - A

T^ch- Channel Temperature - °C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

100

400

Pulsed

= –2.0 A

350

300

250

200

150

100

Pulsed

GS = –2.5 V

–4.5 V

ID = –2.0 A

-50

100

150

-2

-4

-6

-8

-10

-12

V^GS- Gate to Source Voltage - V

Tch - Channel Temperature - °C

Data Sheet D20204EJ1V0DS

1...3 4 567 8

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