Datasheet > N0300N

N0300N

更新时间： 2022-11-26 22:37:47

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	253K
描述
MOS FIELD EFFECT TRANSISTOR

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数据手册

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N0300N 数据手册

N0300N

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

120

1000

100

iss

100

^GS= 4.5 V

oss

10 V

rss

= 2.0 A

^GS= 0 V

Pulsed

f = 1.0 MHz

-50 -25

25 50 75 100 125 150 175

0.01

0.1

100

T^ch- Channel Temperature - °C

V^DS- Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

100

DD = 15 V

^GS= 10 V

= 6 Ω

^DD= 24 V

15 V

6 V

d(off)

d(on)

= 4.5 A

0.1

100

I^D- Drain Current - A

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

100

0.1

0.01

0.001

0.0001

^GS= 0 V

Pulsed

0.5

1.5

V^F(S-D)- Source to Drain Voltage - V

Data Sheet D19781EJ1V0DS

1...4 5 678

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