Datasheet > N02M083WL1AD-70I

N02M083WL1AD-70I

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
NANOAMP		医疗静态存储器
页数	文件大小	规格书
9页	213K
描述
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N02M083WL1AD-70I 数据手册

NanoAmp Solutions, Inc.

Functional Block Diagram

N02M083WL1A

Word

Address

Inputs

Address

Decode

Logic

A - A

Input/

Output

Mux

Page

16K Page

x 16 word

x 8 bit

Address

Inputs

Address

A - A

Decode

Logic

and

I/O - I/O

RAM Array

Buffers

CE1

CE2

Control

Logic

Functional Description

I/O₀- I/O₇

CE1

CE2

MODE

POWER

Standby¹

Write²

X²

High Z

Standby

Active

Data In

Data Out

High Z

Active

Read

Active

1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated

from any external influence and disabled from exerting any influence externally.

2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.

Capacitance

Item

Symbol

C_IN

Test Condition

Min

Max

Unit

V_IN= 0V, f = 1 MHz, T_A= 25^oC

Input Capacitance

I/O Capacitance

C_I/O

1. These parameters are verified in device characterization and are not 100% tested

Stock No. 23207-01 11/01/02

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

123 4 5 6 7...9

下载PDF

与N02M083WL1AD-70I相关器件

型号	品牌	描述	获取价格	数据表
N02M083WL1AN	NANOAMP	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit	获取价格
N02M083WL1AN-70I	NANOAMP	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit	获取价格
N0300N	RENESAS	MOS FIELD EFFECT TRANSISTOR	获取价格
N0300N-T1B-AT	RENESAS	MOS FIELD EFFECT TRANSISTOR	获取价格
N0300P-T1B-AT	NEC	Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal	获取价格
N0301N	RENESAS	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	获取价格