Datasheet > N02M0818L2AN-85I

N02M0818L2AN-85I

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
NANOAMP		医疗静态存储器
页数	文件大小	规格书
8页	216K
描述
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit

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N02M0818L2AN-85I 数据手册

NanoAmp Solutions, Inc.

N02M0818L2A

Timing Waveform of Write Cycle (WE control)

Address

CE1

CE2

High-Z

Data Valid

Data In

WHZ

High-Z

Data Out

Timing Waveform of Write Cycle (CE1 Control)

Address

CE1

(for CE2 Control, use

inverted signal)

Data Valid

Data In

WHZ

High-Z

Data Out

(DOC#14-02-036 Rev C ECN#01-0887)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

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