Datasheet > N02L1618C1AT

N02L1618C1AT

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
11页	263K
描述
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit

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N02L1618C1AT 数据手册

N02L1618C1A

Advance Information

NanoAmp Solutions, Inc.

Timing of Read Cycle (CE = OE = V , WE = V )

Address

Previous Data Valid

Data Valid

Data Out

Timing Waveform of Read Cycle (WE= V )

Address

OHZ

OLZ

LB, UB

LBLZ, UBLZ

LBHZ, UBHZ

High-Z

Data Valid

Data Out

Stock No. 23265-A

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

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型号	品牌	描述	获取价格	数据表
N02L1618C1AT2	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L1618C1AT2-70I	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L1618C1AT2-85I	AMI	Standard SRAM, 128KX16, 85ns, CMOS, PDSO44, GREEN, TSOP2-44	获取价格
N02L1618C1AT2-85I	NANOAMP	Standard SRAM, 128KX16, 85ns, CMOS, PDSO44	获取价格
N02L1618C1AT-70I	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L1618C1AT-85I	AMI	Standard SRAM, 128KX16, 85ns, CMOS, PDSO44, TSOP2-44	获取价格