Datasheet > N0201S

N0201S

更新时间： 2022-03-21 03:28:42

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管
页数	文件大小	规格书
5页	103K
描述
NPN SILICON EPITAXIAL TRANSISTOR

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N0201S 数据手册

N0201S

TYPICAL CHARACTERISTICS (T_a= 25C)

DERATING FACTOR FORWARD BIAS

SAFE OPERATING AREA

120

T = 25˚C

Single pulse

1 ms

100

10 ms

100 ms

0.1

0.01

CE - Collector to Emitter Voltage - (V)

100

80 100 120 140 160

- Ambient Temperature - ˚C

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

0.04

0.03

0.02

0.01

4.5 4.0

5.0

3.5

3.0

100

0.8

0.6

0.4

0.2

2.5

2.0

1.5

1.0

= 0.5 mA

IB = 10 μA

0.4

0.8

1.2

1.6

CE - Collector to Emitter Voltage - (V)

VCE - Collector to Emitter Voltage - (V)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

COLLECTOR AND BASE SATURATION VOLTAGE vs.

COLLECTOR CURRENT

1000

100

= 10I

125˚C

25˚C

0.1

25˚C

VBE(sat)

CE = 1 V

Pulsed

VCE(sat)

0.01

0.001

0.01

0.1

0.001

0.01

0.1

- Collector Current - (A)

R07DS0719EJ0100 Rev.1.00

Mar 30, 2012

Page 2 of 5

123 4 5

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