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N01L6183AT7I PDF预览

N01L6183AT7I

更新时间: 2024-01-03 11:44:30
品牌 Logo 应用领域
安森美 - ONSEMI 静态存储器
页数 文件大小 规格书
10页 244K
描述
1Mb Ultra-Low Power Asynchronous CMOS SRAM

N01L6183AT7I 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:TSOP2包装说明:LSSOP, TSOP44,.46,32
针数:44Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.55Is Samacsys:N
最长访问时间:85 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44长度:18.41 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:44字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH并行/串行:PARALLEL
电源:1.8 V认证状态:Not Qualified
座面最大高度:1.25 mm最大待机电流:0.000005 A
最小待机电流:1.2 V子类别:SRAMs
最大压摆率:0.016 mA最大供电电压 (Vsup):2.2 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

N01L6183AT7I 数据手册

 浏览型号N01L6183AT7I的Datasheet PDF文件第1页浏览型号N01L6183AT7I的Datasheet PDF文件第2页浏览型号N01L6183AT7I的Datasheet PDF文件第3页浏览型号N01L6183AT7I的Datasheet PDF文件第5页浏览型号N01L6183AT7I的Datasheet PDF文件第6页浏览型号N01L6183AT7I的Datasheet PDF文件第7页 
N01L6183A  
Power Savings with Page Mode Operation (WE = V )  
IH  
Page Address (A4 - A15 )  
Word Address (A0 - A3)  
CE  
Open page  
...  
Word 16  
Word 1  
Word 2  
OE  
LB, UB  
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal  
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power  
saving feature.  
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open  
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant  
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is  
considerably lower than standard operating currents for low power SRAMs.  
Rev. 8 | Page 4 of 10 | www.onsemi.com  

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