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MXLLCE8.5A PDF预览

MXLLCE8.5A

更新时间: 2024-01-27 10:41:56
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
5页 332K
描述
Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1, 2 PIN

MXLLCE8.5A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.55其他特性:HIGH RELIABILITY
最大击穿电压:10.4 V最小击穿电压:9.44 V
击穿电压标称值:9.92 V外壳连接:ISOLATED
最大钳位电压:14.4 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e0
湿度敏感等级:1最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified最大重复峰值反向电压:8.5 V
子类别:Transient Suppressors表面贴装:NO
技术:AVALANCHE端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MXLLCE8.5A 数据手册

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MXLLCE8.5A 替代型号

型号 品牌 替代类型 描述 数据表
MLCE8.5AE3 MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, RO
MALCE8.5AE3 MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, RO
MXLLCE8.5AE3 MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, RO

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