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MV30001 PDF预览

MV30001

更新时间: 2024-02-11 22:15:26
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管变容二极管
页数 文件大小 规格书
4页 189K
描述
GaAs Varactor Diodes Hyperabrupt

MV30001 数据手册

 浏览型号MV30001的Datasheet PDF文件第2页浏览型号MV30001的Datasheet PDF文件第3页浏览型号MV30001的Datasheet PDF文件第4页 
GaAs Varactor Diodes  
Hyperabrupt  
®
TM  
MV30011 – MV34010  
Features  
High Q Values for Higher Frequency Performance  
Large Tuning Ratios  
Low Reverse Current  
Gamma Values to 1.5  
Available as Bondable Chips and as  
Packaged Diodes  
Available in Chip-on-Board Packaging  
Custom Designs Available  
Applications  
Description  
VCOs  
Microsemi’s GaAs hyperabrupt junction varactor  
diodes are fabricated from epitaxial layers grown  
at Microsemi by the Chemical Vapor Deposition  
technique. The layers are processed at using  
proprietary techniques resulting in varactors with  
constant gamma, high Q factor and repeatable  
tuning curves. These varactors are available in a  
variety of microwave ceramic packages or  
bondable chips for operation from UHF to  
millimeter wave frequencies.  
Phase-Locked Oscillators  
High Q Tunable Filters  
Phase Shifters  
Pre-Selectors  
Maximum Ratings  
Reverse  
V
oltage  
Breakdown  
50 mA 25°C  
+20 dBm 25°C  
Voltage  
Forward Current  
Incident Power  
@
@
Operating  
T
emperature  
-55°C to +175°C  
-55°C to +200°C  
Storage emperature  
T
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com  
Specifications are subject to change. Consult factory for the latest information.  
1 The MS3000 Series of products are  
supplied with a RoHS complaint Gold finish  
.
These devices are ESD sensitive and must be handled using ESD precautions.  
Microsemi  
Copyright 2008  
Rev: 2009-05-11  
Microwave Products  
Page 1  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  

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