Datasheet > MT6C03AE_07

MT6C03AE_07

更新时间： 2024-01-07 20:45:29

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
3页	118K
描述
VHF~UHF Band Low Noise Amplifier Applications

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中文翻译

获取价格

数据手册

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MT6C03AE_07 数据手册

MT6C03AE

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT6C03AE

VHF~UHF Band Low Noise Amplifier Applications

Unit: mm

•

Two devices are built in to the super-thin and extreme super mini (6

pins) package: ES6

Mounted Devices

Q1/Q2: SSM (TESM)

Three-pins (SSM/TESM) mold products are

corresponded.

MT3S03AS (MT3S03AT)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Q1/Q2

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

JEDEC

JEITA

―

Collector power dissipation

100

(Note 1)

Junction temperature

125

°C

TOSHIBA

2-2N1B

Storage temperature range

stg

−55~125

Weight: 0.003 g (typ.)

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total power dissipation of Q1 and Q2.

Marking

Pin Assignment (top view)

2007-11-01

12 3

中文翻译

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