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MSP430F2013IRSAT PDF预览

MSP430F2013IRSAT

更新时间: 2024-01-31 02:11:48
品牌 Logo 应用领域
德州仪器 - TI 微控制器
页数 文件大小 规格书
88页 2460K
描述
MIXED SIGNAL MICROCONTROLLER

MSP430F2013IRSAT 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:QFN
包装说明:QFN-16针数:16
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.31.00.01Factory Lead Time:1 week
风险等级:0.72Is Samacsys:N
具有ADC:YES其他特性:IT ALSO OPERATES AT 1.8 V AT 6 MHZ
地址总线宽度:位大小:16
边界扫描:YESCPU系列:MSP430
最大时钟频率:16 MHzDAC 通道:NO
DMA 通道:NO外部数据总线宽度:
格式:FIXED POINT集成缓存:NO
JESD-30 代码:S-PQCC-N16JESD-609代码:e4
长度:4 mm低功率模式:YES
湿度敏感等级:2DMA 通道数量:
I/O 线路数量:10串行 I/O 数:
端子数量:16计时器数量:2
片上数据RAM宽度:8片上程序ROM宽度:8
最高工作温度:105 °C最低工作温度:-40 °C
PWM 通道:YES封装主体材料:PLASTIC/EPOXY
封装代码:HVQCCN封装等效代码:LCC16,.16SQ,25
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260电源:2/3.3 V
认证状态:Not QualifiedRAM(字节):128
RAM(字数):0.125ROM(单词):2048
ROM可编程性:FLASH座面最大高度:1 mm
速度:16 MHz子类别:Microcontrollers
最大压摆率:0.37 mA最大供电电压:3.6 V
最小供电电压:1.8 V标称供电电压:2.2 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:4 mmuPs/uCs/外围集成电路类型:MICROCONTROLLER, RISC
Base Number Matches:1

MSP430F2013IRSAT 数据手册

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MSP430F2013IRSAT 替代型号

型号 品牌 替代类型 描述 数据表
MSP430F2012IRSAT TI

完全替代

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MSP430F2003IRSAT TI

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MSP430F2002IRSAT TI

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