Datasheet > MSM511000C

MSM511000C

更新时间： 2024-02-23 16:53:23

品牌	Logo	应用领域
冲电气 - OKI		/
页数	文件大小	规格书
15页	223K
描述
1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

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数据手册

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MSM511000C 数据手册

¡ Semiconductor

MSM511000C/CL

DC Characteristics

(V_CC= 5 V 10ꢀ, Ta = 0°C to 70°C)

MSM511000 MSM511000 MSM511000 MSM511000

C/CL-45 C/CL-50 C/CL-60 C/CL-70

Parameter

Symbol

Condition

Unit Note

Min. Max. Min. Max. Min. Max. Min. Max.

Output High Voltage

Output Low Voltage

I_OH= –5.0 mA

I_OL= 4.2 mA

V_OH

V_OL

2.4 V_CC2.4 V_CC2.4 V_CC2.4 V_CC

0.4

0 V £ V_I£ 6.5 V;

All other pins not

under test = 0 V

D_OUTdisable

Input Leakage Current

I_LI

–10 10 –10 10 –10 10 –10 10

Output Leakage Current

–10 10 –10 10 –10 10 –10 10 mA

I_LO

0 V £ V_O£ 5.5 V

Average Power

Supply Current

(Operating)

RAS, CAS cycling,

—

1, 2

I_CC1

—

t_RC= Min.

RAS, CAS = V_IH

RAS, CAS

—

Power Supply

I_CC2

I_CC3

I_CC5

I_CC6

I_CC7

I_CC10

Current (Standby)

1, 5

≥ V_CC–0.2 V

RAS cycling,

CAS = V_IH,

200

Average Power

Supply Current

—

60 mA 1, 2

(RAS-only Refresh)

t_RC= Min.

RAS = V_IH,

Power Supply

CAS = V_IL,

Current (Standby)

D_OUT= enable

Average Power

Supply Current

(CAS before RAS Refresh)

Average Power

Supply Current

(Fast Page Mode)

Average Power

Supply Current

(Battery Backup)

RAS cycling,

300

60 mA 1, 2

CAS before RAS

RAS = V_IL,

CAS cycling,

55 mA 1, 3

_PC= Min.

t_RC= 125 ms,

CAS before RAS,

t_RAS£ 1 ms

1, 4,

300

Notes : 1. I Max. is specified as I for output open condition.

2. The address can be changed once or less while RAS = V .

3. The address can be changed once or less while CAS = V

4. V – 0.2 V £ V £ 6.5 V, –1.0 V £ V £ 0.2 V.

5. L-version.

5/15

1 2 3 456 7 8...15

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