Datasheet > MSJL11N65-TP

MSJL11N65-TP

更新时间： 2024-01-19 23:49:30

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	589K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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MSJL11N65-TP 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.72	Base Number Matches：	1

MSJL11N65-TP 数据手册

MSJL11N65

Features

•

Very Low FOM R_DS(on)× Q _g

Epoxy Meets UL 94 V-0 Flammability Rating

Moisture Sensitivity Level 1

N-CHANNEL

Halogen Free Available Upon Request By Adding Suffix "-HF"

Super-Junction

Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Power MOSFET

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +150°C

Storage Temperature Range: -55°C to +150°C

Thermal Resistance: 62°C/W Junction to Ambient

Thermal Resistance: 1.28°C/W Junction to Case

DFN8080

Parameter

Rating

650

±30

Symbol

V_DS

V_GS

I_D

Unit

Drain-Source Voltage

Gate-Source Volltage

Continuous Drain Current

Laser Mark

Pin 1#

Pulsed Drain Current ^{(Note 1)}

I_DM

Exposed Thermal

Pad Zone

Single Pulse Avalanche Energy ^{(Note 2)}

Avalanche Current ^{(Note 1)}

E_AS

I_AR

211

1.6

Top View

Bottom View

Repetitive Avalanche Energy ^{(Note 1)}

E_AR

P_D

0.32

Side View

Total Power Dissipation T_C=25°C

Note: 1. Repetitive Rating, Pulse Width Limited by Maximum Junction

Temperature.

2. I_AS=1.6A, V_DD=50V, R_G=25Ω, Starting T_J=25°C .

DIMENSIONS

INCHES MM

MIN MAX

DIM

NOTE

MIN

MAX

0.80

0.05

1.05

0.25

8.10

0.028 0.031 0.70

0.000 0.002 0.00

0.037 0.041 0.95

0.007 0.010 0.18

0.311 0.319 7.90

Internal Structure

0.236

6.00

2.00

TYP.

0.079

0.311 0.319 7.90

0.280 0.287 7.10

0.167 0.175 4.25

8.10

7.30

4.45

1.GATE

2.DRIVER SOURCE

3.POWER SOURCE

4.POWER SOURCE

0.030

0.75

2.75

0.55

TYP.

5.DRAIN

0.108

0.018 0.022 0.45

Rev.3-1-05092019

1/4

MCCSEMI.COM

12 3 4

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