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MS2575 PDF预览

MS2575

更新时间: 2024-02-01 22:36:39
品牌 Logo 应用领域
ADPOW 晶体晶体管射频微波电子航空
页数 文件大小 规格书
3页 98K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MS2575 数据手册

 浏览型号MS2575的Datasheet PDF文件第2页浏览型号MS2575的Datasheet PDF文件第3页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS2575  
RF & MICROWAVE TRANSISTORS  
AVIONICS APPLICATIONS  
Features  
·
·
·
·
·
·
1025-1150 MHz  
GOLD METALLIZATION  
INPUT MATCHED  
INFINITE VSWR CAPABILITY @ RATED CONDITIONS  
POUT = 35 W MINIMUM  
GP = 10.7 dB  
DESCRIPTION:  
The MS2575 is a medium power Class C transistor designed  
specifically for pulsed L-Band avionics applications. Low RF  
thermal resistance and computerized automatic wire bonding  
techniques ensure high reliability and product consistency. The  
MS2575 is housed in the IMPACÔ package with internal input  
matching.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
PDISS  
Parameter  
Value  
150  
Unit  
W
Power Dissipation  
VCE  
Collector-Emitter Bias Voltage  
Junction Temperature  
Device Current  
55  
V
TJ  
IC  
200  
3
ºC  
A
TSTG  
Storage Temperature  
-65 to +200  
1.0  
ºC  
THERMAL DATA  
RTH(J-C)  
Junction-case Thermal Resistance  
°C/W  
dvanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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