Datasheet > 二极管 > 瞬态抑制器> MQSMBGP6KE8.2AE3TR

MQSMBGP6KE8.2AE3TR

更新时间： 2023-01-02 14:29:04

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管瞬态抑制器
页数	文件大小	规格书
4页	222K
描述
Trans Voltage Suppressor Diode, 600W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN

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MQSMBGP6KE8.2AE3TR 数据手册

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SMBJP6KE6.8 thru SMBJP6KE200CA, e3 and

SMBGP6KE6.8 thru SMBGP6KE200CA, e3

600 Watt TRANSIENT VOLTAGE

SUPPRESSOR

S C O T T S D A L E D I V I S I O N

T_LLead Temperature ^oC

V_(BR)- Breakdown Voltage – Volts

FIGURE 4 – SMBJ(G)P6KE series Typical Capacitance vs.

Breakdown Voltage

FIGURE 3 - Derating Curve

PACKAGE DIMENSIONS

SMBJ

SMBG

MIN

MAX

.077 .160

.083 .180

.130 .205

.155 .220

.077

.104

.235

.255

.015

.030

.060

DIMENSIONS IN MILLIMETERS

MIN

MAX

1.96 4.06

2.10 4.57

3.30 5.21

3.94 5.59

1.95

2.65

5.97

6.48

.381

.762

.760

1.520

SMBJ

INCHES

.260

.085

.110

6.60

2.16

2.79

SMBG

INCHES

0.320

0.085

0.110

8.13

2.16

2.79

6-21-2007 Rev C

Microsemi

Page 4

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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