Datasheet > MPC8280CRUMND

MPC8280CRUMND

更新时间： 2024-02-16 18:17:51

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
72页	1234K
描述
Micro Peripheral IC

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中文翻译

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技术参数
数据手册

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MPC8280CRUMND 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

MPC8280CRUMND 数据手册

Electrical and Thermal Characteristics

This device contains circuitry protecting against damage due to high static voltage or electrical ﬁelds;

however, it is advised that normal precautions be taken to avoid application of any voltages higher than

maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused

inputs are tied to an appropriate logic voltage level (either GND or V ).

Figure 2 shows the undershoot and overshoot voltage of the 60x and local bus memory interface of the

MPC8280. Note that in PCI mode the I/O interface is different.

4 V

GV + 5%

GND

GND – 0.3 V

GND – 1.0 V

Not to exceed 10%

of t

SDRAM_CLK

Figure 2. Overshoot/Undershoot Voltage

Table 4 shows DC electrical characteristics.

Table 4. DC Electrical Characteristics

Characteristic

Symbol

Min

Max

Unit

Input high voltage, all inputs except CLKIN

Input low voltage

2.0

GND

2.4

GND

—

3.465

0.8

3.465

0.4

CLKIN input high voltage

IHC

CLKIN input low voltage

ILC

Input leakage current, V = VDDH

µA

Hi-Z (off state) leakage current, V = VDDH

—

Signal low input current, V = 0.8 V

—

Signal high input current, V = 2.0 V

—

Output high voltage, I = –2 mA

2.4

—

except UTOPIA mode, and open drain pins

In UTOPIA mode (UTOPIA pins only): I = -8.0mA

PA[0-31]

PB[4-31]

PC[0-31]

PD[4-31]

In UTOPIA mode (UTOPIA pins only): I = 8.0mA

—

0.5

PA[0-31]

PB[4-31]

PC[0-31]

PD[4-31]

MOTOROLA

MPC8280HardwareSpeciﬁcations

PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE

1...4 5 678 9 10...72

中文翻译

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