Datasheet > MMBT3904-AH

MMBT3904-AH

更新时间： 2023-12-06 20:04:01

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	790K
描述
小信号晶体管

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数据手册

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MMBT3904-AH 数据手册

MMBT3904-AH

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at V_CE= 1 V, I_C= 0.1 mA

at V_CE= 1 V, I_C= 1 mA

at V_CE= 1 V, I_C= 10 mA

at V_CE= 1 V, I_C= 50 mA

at V_CE= 1 V, I_C= 100 mA

h_FE

100

300

Collector Base Cutoff Current

at V_CB= 30 V

Emitter Base Cutoff Current

at V_EB= 6 V

Collector Base Breakdown Voltage

at I_C= 10 µA

Collector Emitter Breakdown Voltage

at I_C= 1 mA

I_CBO

I_EBO

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

Emitter Base Breakdown Voltage

at I_E= 10 µA

Collector Emitter Saturation Voltage

at I_C= 10 mA, I_B= 1 mA

at I_C= 50 mA, I_B= 5 mA

V_CE(sat)

0.2

0.3

Base Emitter Saturation Voltage

at I_C= 10 mA, I_B= 1 mA

at I_C= 50 mA, I_B= 5 mA

V_BE(sat)

0.65

0.85

0.95

Current Gain Bandwidth Product

at V_CE= 20 V, I_C= 10 mA, f = 100 MHz

f_T

C_ob

t_d

300

MHz

Collector Output Capacitance

at V_CB= 5 V, f = 1 MHz

Delay Time

200

at V_CC= 3 V, V_BE= 0.5 V, I_C= 10 mA, I_B1= 1 mA

Rise Time

t_r

at V_CC= 3 V, V_BE= 0.5 V, I_C= 10 mA, I_B1= 1 mA

Storage Time

at V_CC= 3 V, I_C= 10 mA, I_B1= -I_B2= 1 mA

t_s

Fall Time

t_f

at V_CC= 3 V, I_C= 10 mA, I_B1= -I_B2= 1 mA

2 / 5

Dated: 14/11/2022 Rev: 03

123 4 5

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