Datasheet > MMA155AA-Power-Amplifier

MMA155AA-Power-Amplifier

更新时间： 2023-12-06 20:02:17

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
18页	705K
描述
The MMA155AA is a gallium arsenide (GaAs) distributed amplifier that operates between DC and 24 GH

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MMA155AA

DC – 24 GHz 32 dBm Distributed Amplifier

Product Overview

MMA155AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-

electron-mobility transistor (pHEMT) distributed amplifier that operates between DC and 24 GHz. It is ideal for test

instrumentation and wide-band military and space applications. The amplifier provides a gain of 15 dB and 32.5 dBm

of output power at 3 dB gain compression with a nominal bias condition of 650 mA from a + 13V supply. Output IP3 is

typically 35 dBm. The MMA155AA amplifier is DC coupled and features RF I/Os that are internally matched to 50 Ω.

Key Features

Functional Block Diagram

•

Frequency range: DC to 24 GHz

Gain: 15 dB

VREF VDET

VDA VDB

Positive gain slope

Flat power response to 20 GHz

Low- IM3: –37 dBc at 18 dBm, 22 GHz

Low noise figure: 3.0 dB at 10 GHz

Supply: 650 mA @ + 13V

VGG

RFOUT

RFIN

MMA155AA

Power level detector

VG3

VG2

Passivated space-qualified process listed on EPPL007 – 38

50 Ω matched input/output

VG1C

VG1

VG1A

VG1B

Die size: 3.3 mm × 1.68 mm × 0.075 mm

Applications

•

Test and measurement instrumentation

Military and space

Gain, NF, OP1dB & OIP3 Performances

Telecom infrastructure

Wideband microwave radios

Microwave and millimeter-wave communication systems

17.5

Table 1. Performance Overview

Parameter

Frequency range

Gain

Typ.

DC – 24

Units

GHz

Gain

OP1dB

OIP3

12.5

Gain flatness

P1dB

±1

7.5

dBm

dBc

Psat

32.5

–40

2.5

IMD3 @ Pout = 18dBm

Export Classification: EAR99

Frquency (GHz)

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