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ML40215-S-276 PDF预览

ML40215-S-276

更新时间： 2024-01-25 23:08:44
品牌 Logo 应用领域
其他 - ETC 半导体肖特基二极管
页数 文件大小 规格书
4页 119K
描述
High Reliability Semiconductor Schottky Detector Diodes

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中文翻译

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ML40215-S-276 技术参数

生命周期：Transferred包装说明：O-CXMW-G2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.60风险等级：5.3
Is Samacsys：N配置：SINGLE
二极管元件材料：SILICON二极管类型：MIXER DIODE
频带：KU BANDJESD-30 代码：O-CXMW-G2
元件数量：1端子数量：2
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：ROUND
封装形式：MICROWAVE脉冲输入最大功率：0.15 W
脉冲输入功率最小值：1 W认证状态：Not Qualified
表面贴装：YES技术：SCHOTTKY
端子形式：GULL WING端子位置：UNSPECIFIED
肖特基势垒类型：LOW BARRIERBase Number Matches：1

ML40215-S-276 数据手册

 浏览型号ML40215-S-276的Datasheet PDF文件第2页浏览型号ML40215-S-276的Datasheet PDF文件第3页浏览型号ML40215-S-276的Datasheet PDF文件第4页 
Preliminary Specification  
High Reliability Semiconductor  
Schottky Detector Diodes  
ML40215-S-120  
ML40215-S-276  
V1.00  
Features  
ODS 120 Outline  
x
x
x
Low I/F Noise  
High Sensitivity  
Space Qualified  
Description  
The ML40215-S is a low barrier N type Silicon detector diode in the ODS  
120 miniature ceramic pill type package, or in ODS 276 (the same package  
with leads attached).  
These devices are suitable for use in detector applications at frequencies up  
to 18 GHz.  
ODS 276 Outline  
The test tables shown on this data sheet are presented in the same format as  
ESA/SCC 5010 detail specifications. These devices have been tested and  
screened to ESA/SCC 5010 Level B, Lot Acceptance Level 1, either by  
similarity with another diode type or as required by the project. A new  
wafer lot will normally require Lot Acceptance Level 2 testing; repeat  
production (assembly) lots may only require Level 3 testing.  
Alternative cases styles are available, many of which are suitable for Space  
application.  
M/A-COM can provide mixer and detector diodes for most applications.  
The Semiconductor Master Catalogue contains outline drawings for  
alternative case styles as well as information on the following devices:  
x
x
x
x
Surface Mount diodes SOT-23 and SOT-143.  
Beam Lead and Chip Diodes.  
x
x
x
x
Ring and Bridge Quad diodes.  
Axial Lead Diodes.  
P Type Detector Diodes.  
Beamless Beam Lead Diodes ( SurmountTM).  
Tees and Anti-Parallel Pair diodes.  
Gallium Arsenide Schottky Mixer Diodes.  
(Tamb = 25°C)  
Maximum Ratings  
No. Characteristics  
Symbol  
Maximum Ratings  
Units  
Remarks  
1.  
Peak Incident RF  
Power  
PPK  
1.0  
W
Frequency 2.6 to 12.4 GHz, 1µsec max. pulse length.  
See Note 1  
2.  
Peak Incident RF  
Power  
PPK  
0.5  
W
Frequency 12.4 to 18.0 GHz, 1µsec max. pulse length.  
See Note 1  
3.  
4.  
5.  
6.  
7.  
CW RF Power  
CW RF Power  
DC Reverse Voltage  
DC Forward Current  
Operating  
PCW  
PCW  
VR  
IF  
TOP  
150  
100  
2.0  
mW  
mW  
V
mA  
°C  
Frequency 2.6 to 12.4 GHz. See Note 1  
Frequency 12.4 to 18.0 GHz. See Note 1  
20  
See Note 1  
-65 to +150  
Temperature  
8.  
9.  
Storage Temperature  
Soldering Temperature  
TSTO  
TSOL  
-65 to +150  
230  
°C  
°C  
See Note 2  
Notes:  
1. Derate linearly to 0 mW from 25°C to 150°C  
2. For a max duration of 5 seconds and at a distance greater than 1.5 mm from the body of the 276 package  
3. For a duration of 5 seconds at a distance greater than 1.5 mm from the body.  
The Preliminary Specifications Data Sheet Contain Typical Electrical Specifications Which May Change Prior to Final Introduction.  
M/A-COM Ltd.  
North America:  
Tel. (800) 366-2266  
Fax (800) 618-8883  
i
Asia/Pacific:  
Tel. +85 2 2111 8088  
Fax +85 2 2111 8087  
i
Europe:  
Tel. +44 (1344) 869-595  
Fax +44 (1344) 300-020  
1234

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