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ML120G20

更新时间： 2024-01-25 00:51:57
品牌 Logo 应用领域
三菱 - MITSUBISHI 光电半导体
页数 文件大小 规格书
3页 54K
描述
Laser Diode, 658nm

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中文翻译

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ML120G20 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84最大正向电压：3 V
安装特点：THROUGH HOLE MOUNT最高工作温度：75 °C
最低工作温度：-10 °C光电设备类型：LASER DIODE
峰值波长：658 nm半导体材料：AlGaInP
子类别：Laser Diodes表面贴装：NO
Base Number Matches：1

ML120G20 数据手册

 浏览型号ML120G20的Datasheet PDF文件第2页浏览型号ML120G20的Datasheet PDF文件第3页 
MITSUBISHI LASER DIODES  
ML1XX20 SERIES  
FOR OPTICAL INFORMATION SYSTEMS  
TYPE  
NAME  
ML101J20, ML120G20  
This type is under development. Therefore, please note that this data sheet may be changed without any notice.  
DESCRIPTION  
FEATURES  
•High Output Power: 140mW (Pulse)  
• High Efficiency: 1.0W/A (typ.)  
• Visible Light: 658nm (typ.)  
ML1XX20 is  
a
high-power, high-efficient AlGaInP  
stable, single  
semiconductor laser which provides  
a
transverse mode oscillation with emission wavelength of  
658nm and standard pulse light output of 140mW.  
ML1XX20 has a real-index-waveguide which improves the  
slope efficiency (reduction of the operating current) and the  
astigmatic distance.  
• Low Astigmatic Distance: 1mm (typ.)  
APPLICATION  
Also, ML1XX20 has a window-mirror-facet which improves  
the maximum output power. That leads to highly reliable and  
high-power operation.  
Portable High-Density Optical Disc Drives  
Re-Writable DVD Drives  
ABSOLUTE MAXIMUM RATINGS (Note 1)  
Symbol  
Parameter  
Conditions  
CW  
Ratings  
Unit  
mW  
60  
Po  
Light output power  
Pulse(Note 2)  
-
140  
2
VRL  
Tc  
Reverse voltage  
Case temperature  
Storage temperature  
V
-
-
-10 ~ +75  
°C  
°C  
Tstg  
-40 ~ +100  
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time.  
This does not mean the guarantee of its lifetime. As for the reliability, please refer to the reliability report issued by  
Quality Assurance Section, HF & Optical Semiconductor Division, Mitsubishi Electric Corporation.  
Note2: TARGET SPEC /Condition Duty Cycle: less than 50%, pulse width: less than 100ns  
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25°C)  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
55  
Max  
Unit  
mA  
Ith  
Threshold current  
Operating current  
Operating voltage  
Slope efficiency  
Peak wavelength  
CW  
-
-
-
Iop  
Vop  
h
CW, Po=50mW  
CW, Po=50mW  
CW, Po=50mW  
CW, Po=50mW  
-
105  
2.4  
mA  
-
-
3.0  
-
V
1.0  
mW/mA  
nm  
l p  
654  
658  
662  
Beam divergence angle  
(parallel)  
q//  
q^  
CW, Po=50mW  
CW, Po=50mW  
7
9
12  
21  
°
°
Beam divergence angle  
(perpendicular)  
15  
18  
As of Mar. ‘03  
MITSUBISHI  
ELECTRIC  
( 1 / 3 )  
123

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