Datasheet > MCA500-12I1

MCA500-12I1

更新时间： 2024-01-25 15:06:31

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
12页	922K
描述
Silicon Controlled Rectifier,

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MCA500-12I1 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.66	Base Number Matches：	1

MCA500-12I1 数据手册

IXYS

Thyristor/Diode Module Types M##500-12io1 and M##500-18io1

8.0 Computer Modelling Parameters

8.1 Thyristor Dissipation Calculations

-V_{T 0}+ V_{T 0}+ 4× ff ²×r ×W_AV

W_AV=

R_th

I_AV=

and:

2× ff ²×r

DT = T_{j max}-T_K

Where V_T0= 0.85 V, r_T= 0.27 mW for the thyristor and V_T0= 0.72 V, r_T= 0.143 mW for the diode.

R_th= Supplementary thermal impedance, see table below and

ff = Form factor, see table below.

Supplementary Thermal Impedance

Conduction Angle

Square wave

Sine wave

30°

60°

90°

120°

180°

270°

d.c.

0.07067 0.06791 0.06629 0.06525 0.06395 0.06277

0.062

0.06767 0.06536 0.06408 0.0633

Form Factors

0.062

Conduction Angle

Square wave

Sine wave

30°

3.464

3.98

60°

90°

120°

1.732

1.879

180°

1.414

1.57

270°

d.c.

2.449

2.778

1.149

2.22

8.2 Calculating thyristor V_Tusing ABCD Coefficients

The on-state characteristic I_Tvs. V_T, on page 6 is represented in two ways;

(i) the well established V_T0and r_Ttangent used for rating purposes and

(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V_Tin terms of

I_Tgiven below:

V_T= A + B ×ln

(

I_T+ C × I_T+ D × I_T

)

The constants, derived by curve fitting software, are given below for both hot and cold characteristics.

The resulting values for V_Tagree with the true device characteristic over a current range, which is

limited to that plotted.

25°C Coefficients

125°C Coefficients

0.7860338

-0.099137717

0.1987038

4.23812×10^-4

9.929062×10^-3

1.94704×10^-4

7.409213×10^-3

-0.01453705

Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2

Page 4 of 11

June, 2019

1 2 345 6 7...12

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