Datasheet > MC6415

MC6415

更新时间： 2022-04-12 11:26:49

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	419K
描述
P-Channel 20-V (D-S) MOSFET High performance trench technology

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MC6415 数据手册

Freescale

AO6415/MC6415

Typical Electrical Characteristics

100

0.15

0.12

0.09

0.06

0.03

I_D=-3.6A

T_A= 125^oC

0.1

25^oC

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 7. Source-Drain Diode Forward Voltage

Figure 8. On-Resistance with Gate to Source Voltage

SINGLE PULSE

RqJA = 125oC/W

TA = 25oC

1.2

I_D= -250

0.8

0.6

0.4

-50

-25

100

125

150

0.001

0.01

0.1

100

T_A, AMBIENT TEMPERATURE (^oC)

t1, TIME (SEC)

Figure 9. Vth Gate to Source Voltage Vs Temperature

Figure 10. Single Pulse Maximum Power Dissipation

Normalized Thermal Transient Junction to Ambient

0.1

D = 0.5

Rq_JA(t) = r(t) +Rq_JA

Rq_JA= 125 °C/W

0.2

0.1

0.0

P (pk

0.02

0.01

0.001

T_J- T_A= P *Rq_JA(t)

Duty Cycle, D = t1/ t2

SINGLE P ULSE

0.001

0.0001

0.01

0.1

100

1000

t1, TIME (s ec)

Figure 11. Transient Thermal Response Curve

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