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MBRB1560CTHE3_B/P PDF预览

MBRB1560CTHE3_B/P

更新时间: 2023-02-26 15:32:59
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威世 - VISHAY /
页数 文件大小 规格书
5页 111K
描述
Rectifier Diode,

MBRB1560CTHE3_B/P 数据手册

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MBRF15xxCT, MBRB15xxCT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Schottky Rectifier  
FEATURES  
D2PAK (TO-263AB)  
ITO-220AB  
• Power pack  
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
K
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for D2PAK (TO-263AB)) package  
3
2
1
MBRF15xxCT  
MBRB15xxCT  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for ITO-220AB package)  
PIN 1  
K
PIN 1  
PIN 2  
• AEC-Q101 qualified  
PIN 2  
HEATSINK  
PIN 3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
click logo to get started  
DESIGN SUPPORT TOOLS  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode power  
supplies, freewheeling diodes, DC/DC converters, or  
polarity protection application.  
Models  
Available  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: ITO-220AB, D2PAK (TO-263AB)  
IF(AV)  
VRRM  
IFSM  
2 x 7.5 A  
45 V, 60 V  
150 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code, e.g. A, B,...)  
VF  
TJ max.  
0.57 V, 0.65 V  
150 °C  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Package  
ITO-220AB, D2PAK (TO-263AB)  
Common cathode  
Circuit configuration  
Polarity: as marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBRB1545CT  
MBRB1560CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
45  
45  
45  
60  
60  
60  
V
Maximum DC blocking voltage  
total device  
Maximum average forward rectified current at TC = 105 °C  
per diode  
15  
IF(AV)  
IFSM  
7.5  
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on  
rated load per diode  
150  
Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
TJ  
1.0  
0.5  
10 000  
-65 to +150  
-65 to +175  
1500  
V/μs  
°C  
Operating junction temperature range  
Storage temperature range  
TSTG  
VAC  
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
V
Revision: 13-Sep-2018  
Document Number: 88670  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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