Schottky Barrier Rectifiers
Comchip
S M D D i o d e S p e c i a l i s t
MBR20D45FCT-G Thru. MBR20D200FCT-G
Forward current: 20A
Reverse voltage: 45 to 200V
RoHS Device
Features
-Silicon epitaxial planar chip, metal silicon junction.
-Guard ring for overvoltage protection.
ITO-220AB
-Low stored charge, majority carrier conduction.
-Low power loss, high efficiency
0.406(10.30)
0.130(3.30)
0.382( 9.70)
0.098(2.50)
-High current capability.
-High surge capability.
0.272(6.90)
0.248(6.30)
0.189(4.80)
0.165(4.20)
0.606(15.40)
0.583(14.80)
0.134(3.40)
0.118(3.00)
Mechanical data
-Epoxy: UL94V-0 rated flame retardant.
1
2
3
-Case: JEDEC ITO-220AB molded plastic
0.161(4.10)max
body over passivated chip.
0.547(13.90)
0.512(13.00)
-Leads: Axial leads, solderable per MIL-STD-202,
method 208 guranteed.
0.028(0.70)
0.020(0.50)
0.031(0.80)
MAX
-Polarity: As marked
-Weight: 1.70 grams
0.100(2.55)
Circuit diagram
Dimensions in inches and (millimeter)
1
3
Anode
Anode
Cathode
2
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
MBR20D
Symbol
Parameter
Units
45FCT-G 60FCT-G 80FCT-G 100FCT-G 150FCT-G 200FCT-G
Max. Repetitive peak reverse voltage
Max. RMS voltage
VRRM
VRMS
VR
45
31.5
45
60
42
80
56
80
100
70
150
105
150
200
140
200
V
V
Continuous reverse voltage
Max. forward voltage IF=10.0A, TA=25°C
Operating Temperature
60
100
V
VF
0.70
0.80
0.85
0.95
V
TJ
-55 to +150
°C
Symbol
IO
Parameter
Conditions
MIN.
TYP.
MAX.
Units
see Fig.1
Forward rectified current
Forward surge current
20.0
A
A
8.3ms single half sine-wave
(JEDEC method)
IFSM
150
VR =VRRM TA=25°C
VR =VRRM TA=125°C
IR
IR
0.1
10
mA
mA
Reverse Current
Thermal Resistance
Storage temperature
Junction to case
RθJC
4.0
°C/W
°C
TSTG
-65
+175
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.