5秒后页面跳转
MBR20D60FCT-G PDF预览

MBR20D60FCT-G

更新时间: 2024-02-19 15:54:06
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
3页 83K
描述
Schottky Barrier Rectifiers

MBR20D60FCT-G 数据手册

 浏览型号MBR20D60FCT-G的Datasheet PDF文件第2页浏览型号MBR20D60FCT-G的Datasheet PDF文件第3页 
Schottky Barrier Rectifiers  
Comchip  
S M D D i o d e S p e c i a l i s t  
MBR20D45FCT-G Thru. MBR20D200FCT-G  
Forward current: 20A  
Reverse voltage: 45 to 200V  
RoHS Device  
Features  
-Silicon epitaxial planar chip, metal silicon junction.  
-Guard ring for overvoltage protection.  
ITO-220AB  
-Low stored charge, majority carrier conduction.  
-Low power loss, high efficiency  
0.406(10.30)  
0.130(3.30)  
0.382( 9.70)  
0.098(2.50)  
-High current capability.  
-High surge capability.  
0.272(6.90)  
0.248(6.30)  
0.189(4.80)  
0.165(4.20)  
0.606(15.40)  
0.583(14.80)  
0.134(3.40)  
0.118(3.00)  
Mechanical data  
-Epoxy: UL94V-0 rated flame retardant.  
1
2
3
-Case: JEDEC ITO-220AB molded plastic  
0.161(4.10)max  
body over passivated chip.  
0.547(13.90)  
0.512(13.00)  
-Leads: Axial leads, solderable per MIL-STD-202,  
method 208 guranteed.  
0.028(0.70)  
0.020(0.50)  
0.031(0.80)  
MAX  
-Polarity: As marked  
-Weight: 1.70 grams  
0.100(2.55)  
Circuit diagram  
Dimensions in inches and (millimeter)  
1
3
Anode  
Anode  
Cathode  
2
Maximum Ratings and Electrical Characteristics  
Ratings at Ta=25°C unless otherwise noted.  
Single phase, half wave, 60Hz, resistive or inductive loaded.  
For capacitive load, derate current by 20% .  
MBR20D  
Symbol  
Parameter  
Units  
45FCT-G 60FCT-G 80FCT-G 100FCT-G 150FCT-G 200FCT-G  
Max. Repetitive peak reverse voltage  
Max. RMS voltage  
VRRM  
VRMS  
VR  
45  
31.5  
45  
60  
42  
80  
56  
80  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
Continuous reverse voltage  
Max. forward voltage IF=10.0A, TA=25°C  
Operating Temperature  
60  
100  
V
VF  
0.70  
0.80  
0.85  
0.95  
V
TJ  
-55 to +150  
°C  
Symbol  
IO  
Parameter  
Conditions  
MIN.  
TYP.  
MAX.  
Units  
see Fig.1  
Forward rectified current  
Forward surge current  
20.0  
A
A
8.3ms single half sine-wave  
(JEDEC method)  
IFSM  
150  
VR =VRRM TA=25°C  
VR =VRRM TA=125°C  
IR  
IR  
0.1  
10  
mA  
mA  
Reverse Current  
Thermal Resistance  
Storage temperature  
Junction to case  
RθJC  
4.0  
°C/W  
°C  
TSTG  
-65  
+175  
Company reserves the right to improve product design , functions and reliability without notice.  
REV: A  
Page 1  
QW-BB060  
Comchip Technology CO., LTD.  

与MBR20D60FCT-G相关器件

型号 品牌 描述 获取价格 数据表
MBR20D80FCT-G COMCHIP Schottky Barrier Rectifiers

获取价格

MBR20-F100 YANGJIE Schottky Rectifier

获取价格

MBR20-F150 YANGJIE Schottky Rectifier

获取价格

MBR20-F35 YANGJIE Schottky Rectifier

获取价格

MBR20-F45 YANGJIE Schottky Rectifier

获取价格

MBR20-F50 YANGJIE Schottky Rectifier

获取价格