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MAX2602 PDF预览

MAX2602

更新时间: 2024-01-02 01:43:14
品牌 Logo 应用领域
美信 - MAXIM /
页数 文件大小 规格书
8页 57K
描述
Octal.13-Bit Voltage-Output DAC with Parallel Interface[MAX547/MAX547ACMH/MAX547ACMH-T/MAX547ACQH-D/MAX547ACQH-TD/MAX547AEMH/MAX547AEMH-T/MAX547AEQH-D/MAX547AEQH-TD/MAX547BC/D/MAX547BCMH/MAX547BCMH-T/MAX547BCQH-D/MAX547BCQH-TD/MAX547BEMH/MAX547BEMH-T/MAX547BEQH-D/MAX547BEQH-TD ]

MAX2602 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:6 weeks
风险等级:5.04Is Samacsys:N
最大集电极电流 (IC):1.2 A集电极-发射极最大电压:15 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):100
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MAX2602 数据手册

 浏览型号MAX2602的Datasheet PDF文件第1页浏览型号MAX2602的Datasheet PDF文件第3页浏览型号MAX2602的Datasheet PDF文件第4页浏览型号MAX2602的Datasheet PDF文件第5页浏览型号MAX2602的Datasheet PDF文件第6页浏览型号MAX2602的Datasheet PDF文件第7页 
900M Hzプリケーション用  
3.6V 1W RFワートランジスタ  
ABSOLUTE MAXIMUM RATINGS  
Collector-Emitter Voltage, Shorted Base (V  
)....................17V  
Operating Temperature Range ...........................-40°C to +85°C  
Storage Temperature Range .............................-65°C to +165°C  
Junction Temperature ......................................................+150°C  
Lead Temperature (soldering, 10sec) .............................+300°C  
CES  
Emitter Base Reverse Voltage (V  
)...................................2.3V  
EBO  
BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V  
Average Collector Current (I )........................................1200mA  
C
Continuous Power Dissipation (T = +70°C)  
A
PSOPII (derate 80mW/°C above +70°C) (Note 1) ..........6.4W  
Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section).  
Stresses beyond those listed under Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional  
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to  
absolute maximum rating conditions for extended periods may affect device reliability.  
DC ELECTRICAL CHARACTERISTICS  
(T = T  
to T , unless otherwise noted.)  
MAX  
A
MIN  
PARAMETER  
SYMBOL  
BV  
CONDITIONS  
Open base  
Shorted base  
MIN  
15  
TYP  
MAX  
UNITS  
CEO  
Collector-Emitter Breakdown  
Voltage  
I
C
< 100µA  
V
BV  
CES  
15  
/1MAX062  
Collector-Emitter Sustaining  
Voltage  
LV  
I
= 200mA  
5.0  
V
V
CEO  
C
Collector-Base Breakdown  
Voltage  
BV  
CBO  
I
C
< 100µA, emitter open  
15  
DC Current Gain  
h
I
C
= 250mA, V = 3V  
100  
FE  
CE  
Collector Cutoff Current  
Output Capacitance  
I
V
= 6V, V = 0V  
0.05  
9.6  
1.5  
µA  
pF  
CES  
CE  
BE  
C
V
= 3V, I = 0mA, f = 1MHz  
OB  
CB E  
AC ELECTRICAL CHARACTERISTICS  
(Test Circuit of Figure 1, V = 3.6V, V = 0.750V, Z  
= Z  
= 50, P  
= 30dBm, f = 836MHz, T = +25°C, unless oth-  
OUT A  
CC  
BB  
LOAD  
SOURCE  
erwise noted.)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
GHz  
Frequency Range  
Base Current  
f
(Note 2)  
DC  
1
I
B
4.2  
-43  
-42  
11.6  
58  
mA  
V
= 3.6V, P  
= 3.0V, P  
= 30dBm  
= 29dBm  
dBc  
CC  
OUT  
OUT  
Harmonics  
2fo, 3fo  
V
CC  
Power Gain  
P
= 30dBm  
dB  
%
OUT  
η
Collector Efficiency  
No modulation  
Stability under Continuous  
Load Mismatch Conditions  
V
SWR  
V
CC  
= 5.5V, all angles (Note 3)  
8:1  
IM3  
IM5  
NF  
-16  
-25  
3.3  
P
= +30dBm total power, f1 = 835MHz,  
OUT  
Two-Tone IMR  
dBc  
dB  
f2 = 836MHz  
V = 0.9V  
BB  
Noise Figure  
Note 2: Guaranteed by design.  
Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric  
degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation  
capability is observed.  
2
_______________________________________________________________________________________  

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