3.0 V 100 mW RF Power Amplifier
IC for Bluetooth
V 1.00
Features
MA02305AK
n 20 dB Gain – dramatically increases range of your low
power Bluetooth devices
n Single 3.0V positive supply– operates over a wide
range of supply voltages
n Extremely small size – 6 pin SOT plastic package -
3 mm x 1.75 mm body size
n Output power easily controllable via VDD1
n 45% Power Added Efficiency
n 100% Duty Cycle
n 2000 to 2900 MHz Operation
®
n Self-Aligned MSAG -Lite MESFET Process
Description
The MA02305AK is an RF power amplifier based on M/A-
â
COM’s Self-Aligned MSAG MESFET Process. This
product is designed for use in 2.4 GHz ISM products as a
booster for high power Bluetooth devices. Output power
can be controlled to meet Bluetooth requirements via vary-
Maximum Ratings (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
ing input power or the voltage on VDD1
.
DC Supply Voltage
RF Input Power
VDD
5.5
10
V
Ordering Information
P
IN
mW
Part Number
Package
Junction Temperature
TJ
150
°C
MA02305AK-R7
7 inch, 3000 Piece Reel
MA02305AK Test Board
Storage Temperature Range
TSTG
-40 to +150 °C
MA02305AK-SMB
Electrical Characteristics: VDD1 = 2.5 V, VDD2 = 3 V, PIN = +0 dBm, Duty Cycle = 100%, TA = 25°C
Characteristic
Frequency Range
Symbol
Min
2400
18.7
40
Typ
Max
Unit
MHz
dBm
%
ƒ
POUT
h
2500
Output Power f = 2450 MHz
Power Added Efficiency f = 2450 MHz
Harmonics
20
45
2ƒ
3ƒ
-30
-27
-26
-22
dBc
Input VSWR
-
S21
RTH
-
1.5
-25
180
2.0
:1
dB
Off Isolation (VDD=0 V)
Thermal Resistance, junction to soldering point (pin 2)
Load Mismatch (VDD = 5.5 V, VSWR = 8:1, PIN = 0 dBm)
°C/W
No Degradation in Power Output
Stability (P = 0dBm, VDD = 0-5.5 V, Load VSWR = 5:1, fixed phases)
-
All non-harmonically related outputs
more than 60 dB below desired signal
IN