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M95512-D-WDW3P/AB PDF预览

M95512-D-WDW3P/AB

更新时间: 2022-03-04 06:01:04
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
48页 479K
描述
512 Kbit serial SPI bus EEPROM with high-speed clock

M95512-D-WDW3P/AB 数据手册

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M95512-DR  
M95512-R M95512-W  
512 Kbit serial SPI bus EEPROM  
with high-speed clock  
Features  
Compatible with the Serial Peripheral Interface  
(SPI) bus  
Memory array  
– 512 Kb (64 Kbytes) of EEPROM  
– Page size: 128 bytes  
Additional Write lockable Page (Identification  
SO8 (MN)  
150 mils width  
page)  
Write  
– Byte Write within 5 ms  
– Page Write within 5 ms  
Write Protect: quarter, half or whole memory  
array  
TSSOP8 (DW)  
169 mils width  
High-speed clock frequency (20 MHz)  
Single supply voltage: 1.8 V to 5.5 V  
More than 1 Million Write cycles  
More than 40-year data retention  
Enhanced ESD Protection  
Packages  
UFDFPN8 (MB)  
2 × 3 mm (MLP)  
– ECOPACK2® (RoHS compliant and  
Halogen-free)  
WLCSP (CS)  
September 2010  
Doc ID 11124 Rev 13  
1/48  
www.st.com  
1

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