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M63813GP PDF预览

M63813GP

更新时间: 2024-02-11 01:15:54
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体二极管小信号双极晶体管开关光电二极管
页数 文件大小 规格书
5页 68K
描述
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

M63813GP 技术参数

生命周期:Not RecommendedReach Compliance Code:unknown
风险等级:5.75Base Number Matches:1

M63813GP 数据手册

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>  
M63813P/FP/GP/KP  
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE  
DESCRIPTION  
PIN CONFIGURATION  
M63813P/FP/GP/KP are seven-circuit Single transistor ar-  
rays with clamping diodes. The circuits are made of NPN  
transistors. Both the semiconductor integrated circuits per-  
form high-current driving with extremely low input-current  
supply.  
IN1  
16  
15  
14  
13  
12  
11  
10  
9
1
2
3
4
O1  
O2  
O3  
O4  
IN2  
INz3  
OUTPUT  
IN4  
IN5  
IN6  
IN7  
INPUT  
O5  
5
6
7
8
O6  
O7  
GND  
COM COMMOM  
FEATURES  
Four package configurations (P, FP, GP and KP)  
16P4(P)  
Medium breakdown voltage (BVCEO 35V)  
16P2N-A(FP)  
16P2S-A(GP)  
16P2Z-A(KP)  
Synchronizing current (IC(max) = 300mA)  
Package type  
With clamping diodes  
Low output saturation voltage  
Wide operating temperature range (Ta = 40 to +85°C)  
CIRCUIT DIAGRAM  
COM  
OUTPUT  
APPLICATION  
Driving of digit drives of indication elements (LEDs and  
lamps) with small signals  
INPUT  
2.7k  
10k  
GND  
The seven circuits share the COM and GND.  
The diode, indicated with the dotted line, is parasitic, and  
cannot be used.  
FUNCTION  
The M63813P/FP/GP/KP each have seven circuits consist-  
ing of NPN transistor. A spike-killer clamping diode is pro-  
vided between each output pin (collector) and COM pin  
(pin9). The transistor emitters are all connected to the GND  
pin (pin 8). The transistors allow synchronous flow of 300mA  
collector current. A maximum of 35V voltage can be applied  
between the collector and emitter.  
Unit:  
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)  
Symbol  
Parameter  
Collector-emitter voltage  
Collector current  
Conditions  
Ratings  
–0.5 ~ +35  
300  
Unit  
V
VCEO  
IC  
Output, H  
Current per circuit output, L  
mA  
V
VI  
–0.5 ~ +35  
300  
Input voltage  
mA  
V
IF  
Clamping diode forward current  
Clamping diode reverse voltage  
VR  
35  
1.47  
M63813P  
Ta = 25°C, when mounted M63813FP  
1.00  
Pd  
Power dissipation  
W
0.80  
on board  
M63813GP  
M63813KP  
0.78  
Topr  
Tstg  
Operating temperature  
Storage temperature  
–40 ~ +85  
–55 ~ +125  
°C  
°C  
Jan. 2000  

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