MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
PIN CONFIGURATION
M63813P/FP/GP/KP are seven-circuit Single transistor ar-
rays with clamping diodes. The circuits are made of NPN
transistors. Both the semiconductor integrated circuits per-
form high-current driving with extremely low input-current
supply.
→
→
→
→
→
→
→
IN1
16
15
14
13
12
11
10
9
1
2
3
4
O1
O2
O3
O4
IN2
INz3
→
OUTPUT
IN4
IN5
IN6
IN7
INPUT
→
→
→
→O5
5
6
7
8
→
O6
→
O7
GND
→
COM COMMOM
FEATURES
●
Four package configurations (P, FP, GP and KP)
16P4(P)
● Medium breakdown voltage (BVCEO ≥ 35V)
●
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
Synchronizing current (IC(max) = 300mA)
Package type
●
With clamping diodes
●
Low output saturation voltage
●
Wide operating temperature range (Ta = –40 to +85°C)
CIRCUIT DIAGRAM
COM
OUTPUT
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
INPUT
2.7k
10k
GND
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
FUNCTION
The M63813P/FP/GP/KP each have seven circuits consist-
ing of NPN transistor. A spike-killer clamping diode is pro-
vided between each output pin (collector) and COM pin
(pin9). The transistor emitters are all connected to the GND
pin (pin 8). The transistors allow synchronous flow of 300mA
collector current. A maximum of 35V voltage can be applied
between the collector and emitter.
Unit: Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
Collector-emitter voltage
Collector current
Conditions
Ratings
–0.5 ~ +35
300
Unit
V
VCEO
IC
Output, H
Current per circuit output, L
mA
V
VI
–0.5 ~ +35
300
Input voltage
mA
V
IF
Clamping diode forward current
Clamping diode reverse voltage
VR
35
1.47
M63813P
Ta = 25°C, when mounted M63813FP
1.00
Pd
Power dissipation
W
0.80
on board
M63813GP
M63813KP
0.78
Topr
Tstg
Operating temperature
Storage temperature
–40 ~ +85
–55 ~ +125
°C
°C
Jan. 2000