M63817KP

更新时间： 2024-02-29 03:55:40

品牌	Logo	应用领域
三菱 - MITSUBISHI		晶体二极管晶体管
页数	文件大小	规格书
5页	74K
描述
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

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技术参数
数据手册

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M63817KP 技术参数

生命周期：	Not Recommended	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Is Samacsys：	N	Base Number Matches：	1

M63817KP 数据手册

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63817P/FP/KP

8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION

PIN CONFIGURATION

M63817P/FP/KP are eight-circuit Single transistor arrays

with clamping diodes. The circuits are made of NPN transis-

tors. Both the semiconductor integrated circuits perform

high-current driving with extremely low input-current supply.

→

IN1→

→

IN2

→

IN3

→

IN4

OUTPUT

INPUT

→

IN5

→

IN6

→

IN7

FEATURES

^●Three package configurations (P, FP, and KP)

→

IN8

→

●

Medium breakdown voltage (BVCEO ≥ 35V)

→COM

GND

COMMOM

^●Synchronizing current (IC(max) = 300mA)

●

With clamping diodes

Package type 18P4G(P)

●

Low output saturation voltage

●

Wide operating temperature range (Ta = –40 to +85°C)

IN1

IN2

IN3

IN4

IN5

IN6

IN7

IN8

→

APPLICATION

Driving of digit drives of indication elements (LEDs and

lamps) with small signals

INPUT

OUTPUT

COMMOM

COM

GND

FUNCTION

NC : No connection

The M63817P/FP/KP each have eight circuits consisting of

NPN transistor. A spike-killer clamping diode is provided be-

tween each output pin (collector) and COM pin. The transis-

tor emitters are all connected to the GND pin. The transistors

allow synchronous flow of 300mA collector current. A maxi-

mum of 35V voltage can be applied between the collector

and emitter.

20P2N-A(FP)

Package type 20P2E-A(KP)

CIRCUIT DIAGRAM

COM

OUTPUT

INPUT

10.5k

10k

GND

The eight circuits share the COM and GND.

The diode, indicated with the dotted line, is parasitic, and

cannot be used.

Unit: Ω

Jan. 2000

12 3 4 5

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