Datasheet > M61516SFSN

M61516SFSN

更新时间： 2024-02-14 06:49:35

品牌	Logo	应用领域
MTRONPTI		石英晶振压控振荡器温度补偿晶振有源晶体振荡电路
页数	文件大小	规格书
7页	1153K
描述
5.0 x 7.0 mm, 3.0, 3.3 & 5.0 V, HCMOS or Clipped Sine Wave, Precision TCXO/TCVCXO

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数据手册

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M61516SFSN 数据手册

M615x Series

5.0 x 7.0 mm, 3.0, 3.3 & 5.0 V, HCMOS or Clipped Sine Wave,

Precision TCXO/TCVCXO

Handling Information

Although protection circuitry has been designed into the M615x oscillator, proper precautions should be taken to

avoid exposure to electrostatic discharge (ESD) during handling and mounting. MtronPTI utilizes a human-body

model (HBM) and a charged-device model (CDM) for ESD-susceptibility testing and protection design evaluation.

ESDꢀvoltageꢀthresholdsꢀareꢀdependentꢀonꢀtheꢀcircuitꢀparametersꢀusedꢀtoꢀdeﬁneꢀtheꢀmode.ꢀꢀAlthoughꢀnoꢀindustry-

wide standard has been adopted for the CDM, a standard HBM (resistance = 1500 Ω, capacitance = 100 pF) is

widely used and therefore can be used for comparison purposes. The HBM ESD threshold presented here was

obtained using these circuit parameters.

Model

ESD Threshold, Minimum

Unit

ATTENTION

Human Body

Charged Device

1500*

Static Sensitive Devices

Handle only at Static

Safe Work Stations

* MIL-STD-833D, Method 3015, Class 1

Typical Test Circuits

Tristate

Control

N/C

Test Circuit - N Package

With Tristate

MtronPTI reserves the right to make changes to the product(s) and service(s) described herein without notice. No liability is assumed as a result of their use or application.

Please see www.mtronpti.com for our complete offering and detailed datasheets. Contact MtronPTI for your application speciﬁc requirements at 800.762.8800 toll free or 605.665.9321.

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