LS120
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems replaces discontinued Intersil IT120
FEATURES
The LS120 is a monolithic pair of NPN transistors
Direct Replacement for INTERSIL IT120
HIGH hFE @ LOW CURRENT
OUTPUT CAPACITANCE
mounted in a single SOT-23 package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The LS120 is a direct replacement for discontinued
Intersil IT120.
≥ 200 @ 10µA
≤ 2.0pF
≤ 5.0µV°C
VBE tracking
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
The 6 Pin SOT-23 provides ease of manufacturing, and
a lower cost assembly option.
Maximum Temperatures
Storage Temperature
‐65°C to +200°C
‐55°C to +150°C
(See Packaging Information).
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
250mW
500mW
2.3mW/°C
4.3mW/°C
LS120 Features:
High hfe at low current
Tight matching
Tight VBE tracking
Low Output Capacitance
Collector Current
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
|VBE1 – VBE2
∆|(VBE1 – VBE2)| / ∆T
CHARACTERISTIC
MIN
‐‐
‐‐
TYP
‐‐
‐‐
MAX
2
5
UNITS
mV
µV/°C
CONDITIONS
|
Base Emitter Voltage Differential
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
IC = 10µA, VCE = 5V
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
IC = 10µA, VCE = 5V
|IB1 – IB2
|
‐‐
‐‐
5
nA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVCBO
BVCEO
BVEBO
BVCCO
hFE
CHARACTERISTICS
MIN.
45
TYP.
‐‐
MAX.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
0.5
1
1
2
2
10
‐‐
3
UNITS
V
V
V
V
CONDITIONS
IC = 10µA, IE = 0
Collector to Base Voltage
Click To Buy
Collector to Emitter Voltage
Emitter‐Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
45
6.2
60
200
225
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
IC = 10µA, VCE = 5V
IC = 1.0mA, VCE = 5V
IC = 0.5mA, IB = 0.05mA
IC = 0, VEB = 3V
VCE(SAT)
IEBO
ICBO
COBO
CC1C2
IC1C2
fT
Collector Saturation Voltage
Emitter Cutoff Current
V
nA
nA
pF
Collector Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
IE = 0, VCB = 45V
IE = 0, VCB = 5V
VCC = 0V
VCC = ±60V
pF
‐‐
220
‐‐
nA
MHz
dB
IC = 1mA, VCE = 5V
IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ,
f = 1KHz
NF
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
SOT-23 (Top View)
Available Packages:
LS120 in SOT-23
LS120 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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