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LMX2306MWC PDF预览

LMX2306MWC

更新时间： 2024-02-29 12:42:59
品牌 Logo 应用领域
德州仪器 - TI 信息通信管理
页数 文件大小 规格书
25页 363K
描述
PLL FREQUENCY SYNTHESIZER, 550MHz, UUC, WAFER

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LMX2306MWC 技术参数

生命周期：Obsolete包装说明：DIE,
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.7模拟集成电路 - 其他类型：PLL FREQUENCY SYNTHESIZER
JESD-30 代码：X-XUUC-N功能数量：1
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：UNSPECIFIED封装代码：DIE
封装形状：UNSPECIFIED封装形式：UNCASED CHIP
认证状态：Not Qualified最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：2.3 V表面贴装：YES
技术：BICMOS温度等级：INDUSTRIAL
端子形式：NO LEAD端子位置：UPPER
Base Number Matches：1

LMX2306MWC 数据手册

 浏览型号LMX2306MWC的Datasheet PDF文件第1页浏览型号LMX2306MWC的Datasheet PDF文件第2页浏览型号LMX2306MWC的Datasheet PDF文件第4页浏览型号LMX2306MWC的Datasheet PDF文件第5页浏览型号LMX2306MWC的Datasheet PDF文件第6页浏览型号LMX2306MWC的Datasheet PDF文件第7页 
Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
Recommended Operating  
Conditions  
Min  
Max  
Units  
Power Supply Voltage  
Power Supply Voltage  
VCC1  
2.3  
VCC1  
VCC  
−40  
5.5  
VCC1  
5.5  
V
V
VCC1  
−0.3V to +6.5V  
−0.3V to +6.5V  
−0.3V to +6.5V  
VCC2  
VCC2  
Vp  
V
Vp  
Operating Temperature (TA)  
+85  
˚C  
Voltage on Any Pin  
with GND = 0V (VI)  
Storage Temperature Range (TS)  
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to  
the device may occur. Recommended operating conditions indicate condi-  
tions for which the device is intended to be functional, but do not guarantee  
specific performance limits. For guaranteed specifications and test condi-  
tions, see the Electrical Characteristics. The guaranteed specifications apply  
only for the test conditions listed.  
−0.3V to VCC + 0.3V  
−65˚C to +150˚C  
Lead Temperature (TL)  
(solder, 4 sec.)  
+260˚C  
Note 2: This device is a high performance RF integrated circuit with an ESD  
<
rating 2 keV and is ESD sensitive. Handling and assembly of this device  
should only be done at ESD protected work stations.  
Electrical Characteristics  
<
<
VCC = 3.0V, Vp = 3.0V; −40˚C TA 85˚C except as specified  
Symbol  
Parameter  
Conditions  
Values  
Typ  
1.7  
Units  
Min  
Max  
3.5  
5.0  
7.0  
ICC  
Power Supply Current  
LMX2306  
LMX2316  
LMX2326  
VCC = 2.3V to 5.5 V  
VCC = 2.3V to 5.5V  
VCC = 2.3V to 5.5V  
VCC = 3.0V  
mA  
mA  
2.5  
4.7  
mA  
ICC-PWDN  
fIN  
Powerdown Current  
1
µA  
RF Input Operating  
Frequency  
LMX2306  
LMX2316  
LMX2326  
VCC = 2.3V to 5.5V  
VCC = 2.3V to 5.5V  
VCC = 2.3V to 5.5V  
VCC = 2.6V to 5.5V  
25  
0.1  
0.1  
0.1  
5
550  
1.2  
2.1  
2.8  
40  
MHz  
GHz  
GHz  
GHz  
MHz  
MHz  
dBm  
dBm  
dBm  
V
fosc  
fφ  
Maximum Oscillator Frequency  
Maximum Phase Detector Frequency  
RF Input Sensitivity  
10  
PfIN  
VCC = 2.3V to 3.0V  
VCC = 3.0V to 5.0V  
−15  
−10  
+0  
+0  
OSCIN  
VIH  
Oscillator Sensitivity  
−5  
High-Level Input Voltage  
Low-Level Input Voltage  
(Note 4)  
(Note 4)  
0.8 x VCC  
VIL  
0.2 x  
VCC  
V
IIH  
IIL  
High-Level Input Current  
Low-Level Input Current  
VIH = VCC = 5.5V (Note 4)  
−1.0  
−1.0  
1.0  
1.0  
µA  
µA  
VIL = 0V, VCC = 5.5V  
(Note 4)  
IIH  
Oscillator Input Current  
Oscillator Input Current  
Charge Pump Output Current  
VIH = VCC = 5.5V  
100  
µA  
µA  
µA  
IIL  
VIL = 0V, VCC = 5.5V  
−100  
ICPo-source  
VDo = Vp/2, ICPo = LOW  
(Note 3)  
−250  
250  
−1.0  
1.0  
ICPo-sink  
ICPo-source  
ICPo-sink  
ICPo-Tri  
VDo = Vp/2, ICPo = LOW  
(Note 3)  
µA  
mA  
mA  
nA  
VDo = Vp/2, ICPo = HIGH  
(Note 3)  
VCPo = Vp/2, ICPo = HIGH  
(Note 3)  
Charge Pump TRI-STATE Current  
CP Sink vs Source Mismatch  
0.5 ≤ VCPo ≤ Vp − 0.5  
−1.0  
1.0  
<
<
−40˚C TA 85˚C  
ICPo-sink vs  
ICPo-source  
VCPo = Vp/2  
5
%
TA = 25˚C  
3
www.national.com  
1234567...25

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