LPREELIDMIN7AR5Y 0-66-60 epoxy lens type Infrared illuminator LED750-66-60 is a wide
viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaAs
LED chips, mounted on a metal stem TO-66 with AlN ceramics and covered with double coated clear
silicone and epoxy resin. These devices are designed for high current operation with proper heat sinking
to improve thermal conductive efficiency.
Features
Outer dimension (Unit: mm)
1) High reliability
2) Compact (TO-66) package
3) High output power at 750 nm
Applications
1) For IR search light
2) For CCD lighting
3) For night vision light source
Specifications
1) Product name
2) Spec. No.
3) Chip
IR illuminator
LED750-66-60
(1) Material
AlGaAs
(2) Peak wavelength 750 nm
4) Package
(1) Stem
(2) Lens
TO-66 stem with AlN
Clear silicone and epoxy lens
Absolute Maximum Ratings
Item
Symbol Maximum Rated Value
Unit
W
Ambient Temp.
Ta = 25°C
Ta = 25°C
Ta = 25°C
Ta = 25°C
Power Dissipation
Forward Current
7.8
750
PD
IF
mA
A
Pulse Forward Current
Reverse Voltage
IFP
3
50
V
VR
Operating Temperature
Storage Temperature
Soldering Temperature
-30 ~ +80
-30 ~ +110
240
TOPR
TSTG
TSOL
°C
°C
°C
‡Pulse Forward Current condition: Duty = 1% and Pulse Width = 1 µs.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 260°C
Electro-Optical Characteristics
Item
Symbol Condition
PO
Minimum
Typical Maximum
Unit
mW
mW
mW/sr
V
Total Radiated Power
Total Radiated Power
Radiant Intensity
Forward Voltage
Reverse Current
Peak Wavelength
Half Width
1000
4000
450
PO
IE
IFI=F =6030AmA
IF = 600 mA
IF = 600 mA
IR = 10 uA
VF
VR
λP
9.0
50
V
IF = 600 mA
IF = 600 mA
IF = 600 mA
IF = 600 mA
IF = 600 mA
735
750
30
765
nm
nm
∆λ
2Θ/2
tr
Viewing Half Angle
Rise Time
±60
100
100
deg.
ns
Fall Time
tf
ns
‡Heat sink is required thermal resistance <8 K/W
ROITHNER LASERTECHNIK, 1040 Vienna, Austria, Schoenbrunner Str. 7, Tel. +43 1 586 52 43-0, Fax: +43 1 586 52 43 –44
office@oithner-laser.com, www.roithner-laser.com