MUBW 20-06 A6
Output Inverter T1 - T6, D1 - D6
Symbol
Conditions
Maximum Ratings
VCES
VCGR
TVJ = 25°C
600
600
V
V
TVJ = 25°C; RGE = 20kW
±
VGE
IC
TVJ = 25°C
20
V
TC = 25°C
TC = 90°C
23
13
A
A
ICM
tSC
Ptot
tp = 1 ms = 1% duty cycle; TC = 25°C
TC = 90°C
46
26
A
A
IGBT VCE = 600 V; TVJ = 125°C
non-repetitive
10
68
µs
W
TC = 25°C
TVJ
TVJ
Free-Wheeling Diode
IGBT
+150
+150
°C
°C
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
ICES
VGE = 0 V; VCE = 600 V
1
mA
IGES
VCE = 0 V; VGE = 25 V
100 nA
VGE(th)
V(BR)CES
VCE(sat)
VGE = VCE; IC = 0.4 mA
4.5
5.5
6.5
V
V
VGE = 0 V; IC = 10 mA; TVJ = -40°C
600
VGE = 15 V; IC = 15 A; TVJ = 25°C
TVJ = 125°C
2.1
2.4
2.5
2.8
V
V
tf
tr
25
25
ns
ns
Inductive load, TVJ = 125°C
VCC = 300 V; IC = 15 A
td(on)
td(off)
30
200
ns
ns
±
RG = 68 W; VGE = 15 V
Eoff
Eon
0.5
0.7
mJ
mJ
Ciss
Coss
Crss
800
85
52
pF
pF
pF
VGE = 0 V
VCE = 25 V
f = 1 MHz
gfs
Qg
VF
VCE = 20 V; IC = 15 A
4.5
S
VCC = 300 V; IC = 15 A pulse; VGE = 15 V
59
nC
IF = 15 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
2
1.8
V
V
trr
IF = 15 A; VR = -300 V; TVJ = 125°C
diF/dt = -500 A/µs; VGE = 0 V
0.25
µs
Qr
IF = 15 A; VR = -300 V;
diF/dt = -500 A/µs; VGE = 0 V; TVJ = 125°C
TVJ = 25°C
0.4
1.3
µC
µC
Ir
250 µA
RthJC
IGBT
Diode
(per die)
(per die)
1.5
2.0
°C/W
°C/W
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