DATA SHEET
Am29LV033C
32 Megabit (4 M x 8-Bit)
CMOS 3.0 Volt-only Uniform Sector Flash Memory
This product has been retired and is not recommended for designs. For new and current designs, S29AL032D supersedes Am29LV033C and is the factory-recommended migration path.
Please refer to the S29AL032D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
SOFTWARE FEATURES
■ Zero Power Operation
■ Supports Common Flash Memory Interface (CFI)
■ Erase Suspend/Erase Resume
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
— Suspends erase operations to allow programming
in same bank
■ Package options
— 63-ball FBGA
— 40-pin TSOP
■ Data# Polling and Toggle Bits
— Provides a software method of detecting the status
of program or erase cycles
■ Compatible with JEDEC standards
■ Unlock Bypass Program command
— Pinout and software compatible with
single-power-supply flash standard
— Reduces overall programming time when issuing
multiple program command sequences
■ Single power supply operation
HARDWARE FEATURES
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
■ Any combination of sectors can be erased
■ Ready/Busy# output (RY/BY#)
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
— Hardware method for detecting program or erase
cycle completion
■ Hardware reset pin (RESET#)
■ Flexible sector architecture
— Hardware method of resetting the internal state
machine to the read mode
— Sixty-four 64 Kbyte sectors
■ Manufactured on 0.32 µm process technology
■ ACC input pin
PERFORMANCE CHARACTERISTICS
■ High performance
— Acceleration (ACC) function provides accelerated
program times
— Access times as fast as 70 ns
■ Sector protection
— Program time: 7 µs/byte typical utilizing Accelerate
function
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
■ Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— Temporary Sector Unprotect allows changing data
in protected sectors in-system
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■ Command sequence optimized for mass storage
■ Minimum 1 million write cycles guaranteed
— Specific addresses not required for unlock cycles
per sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 22268 Rev: B Amendment/5
Issue Date: September 12, 2006
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