Datasheet > L017D70VD

L017D70VD

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
超微 - AMD		/
页数	文件大小	规格书
48页	952K
描述
16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

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L017D70VD 数据手册

Am29LV017D

16 Megabit (2 M x 8-Bit)

CMOS 3.0 Volt-only Uniform Sector Flash Memory

This product has been retired and is not recommended for designs. For new and current designs, S29AL016D supersedes Am29LV017D and is the factory-recommended migration path.

Please refer to the S29AL016D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Embedded Algorithms

— 2.7 to 3.6 volt read and write operations for

battery-powered applications

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Manufactured on 0.23 µm process technology

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

— Compatible with and replaces Am29LV017B

device

■ Minimum 1,000,000 write cycle guarantee

■ High performance

per sector

— Access times as fast as 70 ns

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

■ Ultra low power consumption (typical values at 5

MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 9 mA read current

— 48-ball FBGA

— 40-pin TSOP

■ CFI (Common Flash Interface) compliant

— 15 mA program/erase current

— Provides device-specific information to the

system, allowing host software to easily

reconfigure for different Flash devices

■ Flexible sector architecture

— Thirty-two 64 Kbyte sectors

— Supports full chip erase

■ Compatibility with JEDEC standards

— Sector Protection features:

— Pinout and software compatible with single-

power supply Flash

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

— Superior inadvertent write protection

■ Data# Polling and toggle bits

Sectors can be locked in-system or via

programming equipment

— Provides a software method of detecting program

or erase operation completion

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing

multiple program command sequences

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

■ Command sequence optimized for mass storage

— Specific address not required for unlock cycles

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21415 Rev: E Amendment/+3

Issue Date: June 13, 2005

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