Datasheet > KBU804

KBU804

更新时间： 2024-02-05 06:02:45

品牌	Logo	应用领域
KISEMICONDUCTOR		二极管
页数	文件大小	规格书
2页	733K
描述
8 Amp Single Phase Bridge Rectifier 50 to 1000 Volts

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技术参数
数据手册

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KBU804 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.68
二极管类型：	BRIDGE RECTIFIER DIODE

KBU804 数据手册

KBU801

THRU

KI SEMICONDUCTOR

KBU807

Features

8 Amp Single Phase

Bridge Rectifier

50 to 1000 Volts

Low Forward Voltage Drop

Ideal For Printer Circuit Boards

High Current Capability and High Reliability

High Surge Current Capability

KBU

Maximum Ratings

Operating Temperature: -50°C to +150°C

Storage Temperature: -50°C to +150°C

Device

Marking

Maximum

Reccurrent

Peak Reverse

Voltage

50V

Maximum Maximum

Catalog

Number

RMS

Voltage

Blocking

Voltage

50V

KBU801 KBU8A

KBU802 KBU8B

KBU803 KBU8D

KBU804 KBU8G

KBU805 KBU8J

KBU806 KBU8K

KBU807 KBU8M

35V

70V

100V

200V

400V

600V

800V

1000V

100V

140V

280V

420V

560V

700V

200V

400V

600V

800V

1000V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

I_F(AV)

8 A

Tc = 100°C

(NOTE 1,2 )

Current

Peak Forward Surge

Current

Maximum

I_FSM

200A

8.3ms, half sine

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

I_R

1.0V

DIMENSIONS

T_C= 25°C

INCHES

MIN

.895

.600

.740

MIN

22.7

DIM

MAX

.935

MAX

NOTE

10 mA T_C= 25°C

300mA

23.7

17.8

19.8

5.7L

7.5

---

.700

16.8

18.8

3.8Æ

---

25.4

1.2

T_C= 100°C

.780

.23L

NOM

HOLE

NOM

.15Æ

---

.300

.052

.100

.048

1.3

.268

---

.180

.280

.140

.220

6.8

---

4.6

7.1

5.3

5.6

NOM

3PL

*Pulse Test: Pulse Width 300msec, Duty Cycle 2%

KI SEMICONDUCTOR

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