Datasheet > KBPXXM-M4

KBPXXM-M4

更新时间： 2022-02-26 14:55:18

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	93K
描述
Glass Passivated Single-Phase Bridge Rectifier

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KBPXXM-M4 数据手册

KBPxxM-M4, 3N2xx-M4

Vishay General Semiconductor

www.vishay.com

Glass Passivated Single-Phase Bridge Rectifier

FEATURES

• UL recognition file number E54214

• Ideal for printed circuit board

• High surge current capability

• High case dielectric strength

• Solder dip 275 °C max. 10 s, per JESD 22-B106

−

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

−

TYPICAL APPLICATIONS

Case Style KBPM

General purpose use in AC/DC bridge full wave rectification

for switching power supply, home appliances, office

equipment, and telecommunication applications.

PRIMARY CHARACTERISTICS

Package

KBPM

1.5 A

MECHANICAL DATA

I_F(AV)

Case: KBPM

V_RRM

50 V to 1000 V

60 A

Molding compound meets UL 94 V-0 flammability rating

I_FSM

Base P/N-M4

- halogen-free, RoHS-compliant, and

I_R

V_F

5 μA

commercial grade

1.0 V

Terminals: Silver plated leads, solderable per

J-STD-002 and JESD 22-B102

T_Jmax.

150 °C

In-line

Diode variations

Polarity: As marked on body

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

KBP005M KBP01M KBP02M KBP04M KBP06M KBP08M KBP10M

PARAMETER

SYMBOL

UNIT

3N246

3N247

100

3N248

200

3N249

400

3N250

600

3N251

800

3N252

1000

700

Maximum repetitive peak reverse voltage ⁽¹⁾

Maximum RMS voltage ⁽¹⁾

Maximum DC blocking voltage ⁽¹⁾

V_RRM

V_RMS

V_DC

140

280

420

560

100

200

400

600

800

1000

Maximum average forward output rectified

current at T_A= 40 °C

I_F(AV)

I_FSM

1.5

T_A= 25 °C

Peak forward surge current 

single half sine-wave ⁽¹⁾

T_A= 150 °C

Rating for fusing (t < 8.3 ms)

I²t

A²s

°C

Operating junction and storage temperature

range ⁽¹⁾

T_J, T_STG

-55 to +150

Note

(1)

JEDEC^®registered values

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

KBP005M KBP01M KBP02M KBP04M KBP06M KBP08M KBP10M

TEST

CONDITIONS

PARAMETER

SYMBOL

UNIT

3N246

3N247

3N248

3N249

3N250

3N251

3N252

Maximum instantaneous

forward voltage drop per

diode ⁽¹⁾

1.0 A

1.0

V_F

1.57 A

1.3

5.0

Maximum DC reverse

T_J= 25 °C

T_J= 125 °C

current at rated DC blocking

I_R

μA

500

(1)

voltage per diode

Typical junction capacitance

per diode

4.0 V, 1 MHz

C_J

Note

(1)

JEDEC^®registered values

Revision: 05-Aug-15

Document Number: 89306

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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