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KBPC810G PDF预览

KBPC810G

更新时间: 2024-02-02 07:45:19
品牌 Logo 应用领域
WTE 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
3页 36K
描述
8.0A GLASS PASSIVATED BRIDGE RECTIFIER

KBPC810G 技术参数

生命周期:Not Recommended包装说明:R-PUFM-W4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.65
其他特性:UL RECOGNIZED最小击穿电压:1000 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PUFM-W4最大非重复峰值正向电流:150 A
元件数量:4相数:1
端子数量:4最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:1000 V
表面贴装:NO端子形式:WIRE
端子位置:UPPERBase Number Matches:1

KBPC810G 数据手册

 浏览型号KBPC810G的Datasheet PDF文件第2页浏览型号KBPC810G的Datasheet PDF文件第3页 
WTE  
PO WER SEM ICONDUCTORS  
KBPC800G – KBPC810G  
8.0A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
!
!
!
!
!
!
Glass Passivated Die Construction  
High Current Capability  
High Case Dielectric Strength  
H
High Surge Current Capability  
J
Ideal for Printed Circuit Board Application  
Plastic Material has Underwriters Laboratory  
Flammability Classification 94V-O  
G
+
~
-
KBPC-8  
Min  
Dim  
A
Max  
19.56  
7.60  
E
A
18.54  
6.35  
B
~
C
19.00  
D
1.27 Ø Typical  
5.33 7.37  
Hole for #6 screw  
E
E
Mechanical Data  
G
!
!
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
D
C
3.60  
4.00  
H
J
12.20  
13.20  
2.38 x 45°C Typical  
All Dimensions in mm  
!
!
!
!
!
Polarity: Marked on Body  
Weight: 5.4 grams (approx.)  
Mounting Position: Through Hole for #6 Screw  
Mounting Torque: 5.0 Inch-pounds Maximum  
Marking: Type Number  
B
A
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
KBPC KPBC KBPC KBPC KBPC KBPC KBPC  
800G 801G 802G 804G 806G 808G 810G  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
8.0  
V
A
Average Rectified Output Current (Note 1) @TA = 50°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
160  
1.1  
A
Forward Voltage (per element)  
@IF = 4.0A  
VFM  
IR  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 125°C  
5.0  
500  
µA  
I2t Rating for Fusing (t<8.3ms) (Note 2)  
Typical Junction Capacitance (Note 3)  
Typical Thermal Resistance (Note 4)  
I2t  
Cj  
160  
200  
A2s  
pF  
RJC  
Tj, TSTG  
6.0  
K/W  
°C  
Operating and Storage Temperature Range  
-55 to +150  
Note: 1. Mounted on 8.6" sq. x 0.24" thick Al. plate.  
2. Non-repetitive, for t > 1ms and < 8.3ms.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
4. Thermal resistance junction to case per element.  
KBPC800G – KBPC810G  
1 of 3  
© 2002 Won-Top Electronics  

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