是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FBGA, BGA48,6X8,32 | Reach Compliance Code: | compliant |
风险等级: | 5.78 | 最长访问时间: | 60 ns |
启动块: | BOTTOM/TOP | 命令用户界面: | YES |
通用闪存接口: | YES | 数据轮询: | YES |
JESD-30 代码: | R-PBGA-B48 | JESD-609代码: | e1 |
内存密度: | 67108864 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 湿度敏感等级: | 3 |
部门数/规模: | 16,126 | 端子数量: | 48 |
字数: | 4194304 words | 字数代码: | 4000000 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA48,6X8,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
页面大小: | 8 words | 并行/串行: | PARALLEL |
电源: | 3/3.3 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
部门规模: | 4K,32K | 最大待机电流: | 0.00003 A |
子类别: | Flash Memories | 最大压摆率: | 0.055 mA |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 切换位: | YES |
类型: | NOR TYPE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8P6415UQB-DI4B0 | SAMSUNG |
获取价格 |
Flash, 4MX16, 60ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48 |
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K8P6415UQB-DI4BT | SAMSUNG |
获取价格 |
Flash, 4MX16, 60ns, PBGA48 |
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K8P6415UQB-DI4D | SAMSUNG |
获取价格 |
Flash, 4MX16, 70ns, PBGA48 |
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K8P6415UQB-DI4D0 | SAMSUNG |
获取价格 |
Flash, 4MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48 |
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K8P6415UQB-EC4BT | SAMSUNG |
获取价格 |
Flash, 4MX16, 60ns, PBGA64 |
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K8P6415UQB-EC4CT | SAMSUNG |
获取价格 |
Flash, 4MX16, 65ns, PBGA64 |
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K8P6415UQB-EC4D | SAMSUNG |
获取价格 |
Flash, 4MX16, 70ns, PBGA64 |
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K8P6415UQB-EE4B | SAMSUNG |
获取价格 |
Flash, 4MX16, 60ns, PBGA64 |
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K8P6415UQB-EE4B0 | SAMSUNG |
获取价格 |
Flash, 4MX16, 60ns, PBGA64, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
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K8P6415UQB-EE4C | SAMSUNG |
获取价格 |
Flash, 4MX16, 65ns, PBGA64 |
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