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K7A321800M-QC14 PDF预览

K7A321800M-QC14

更新时间: 2024-01-01 06:49:32
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路静态存储器时钟
页数 文件大小 规格书
19页 266K
描述
1Mx36 & 2Mx18 Synchronous SRAM

K7A321800M-QC14 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP, QFP100,.63X.87
针数:100Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92Is Samacsys:N
最长访问时间:4 ns其他特性:PIPELINED ARCHITECTURE
最大时钟频率 (fCLK):138 MHzI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
长度:20 mm内存密度:37748736 bit
内存集成电路类型:CACHE SRAM内存宽度:18
功能数量:1端子数量:100
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX18
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装等效代码:QFP100,.63X.87
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2.5/3.3,3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最小待机电流:3.14 V
子类别:SRAMs最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

K7A321800M-QC14 数据手册

 浏览型号K7A321800M-QC14的Datasheet PDF文件第2页浏览型号K7A321800M-QC14的Datasheet PDF文件第3页浏览型号K7A321800M-QC14的Datasheet PDF文件第4页浏览型号K7A321800M-QC14的Datasheet PDF文件第5页浏览型号K7A321800M-QC14的Datasheet PDF文件第6页浏览型号K7A321800M-QC14的Datasheet PDF文件第7页 
K7B323625M  
K7B321825M  
1Mx36 & 2Mx18 Synchronous SRAM  
Document Title  
1Mx36 & 2Mx18-Bit Synchronous Burst SRAM  
Revision History  
Rev. No.  
History  
Draft Date  
Remark  
0.0  
1. Initial draft  
May. 10. 2001  
Advance  
0.1  
0.2  
0.3  
1. Add 165FBGA package  
1. Update JTAG scan order  
Aug. 29. 2001  
Dec. 03. 2001  
Feb. 14 . 2002  
Preliminary  
Preliminary  
Preliminary  
1. Change pin out for 165FBGA  
- x18/x36 ; 11B => from A to NC  
, 2R ==> from NC to A .  
0.4  
1. Insert pin at JTAG scan order of 165FBGA in connection with  
pin out change  
Apr. 20. 2002  
Preliminary  
- x18/x36 ; insert Pin ID of 2R to BIT number of 69  
0.5  
1.0  
1.1  
1. Add Icc, Isb, Isb1 and Isb2 values.  
1. Correct the pin name of 100TQFP.  
May. 10. 2002  
Oct. 15. 2002  
Oct. 17, 2003  
Preliminary  
Final  
1. Change the Stand-by current (Isb)  
Before After  
Final  
Isb - 65 : 100  
140  
130  
130  
110  
100  
- 75 :  
- 85 :  
90  
80  
90  
80  
Isb1  
Isb2  
:
:
2.0  
1. Delete the 119BGA and 165FBGA package.  
2. Delete the 8.5ns speed bin  
Nov. 18, 2003  
Final  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Nov. 2003  
- 1 -  
Rev 2.0  

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