PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1D
Document Title
256Kx16 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
RevNo.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 0.3
History
Draft Data
Remark
Initial release with Preliminary.
Add Low Ver.
Aug. 20. 2001
Sep. 19. 2001
Sep. 28. 2001
Oct. 09. 2001
Preliminary
Preliminary
Preliminary
Preliminary
Package dimensions modify on page 11.
Change ICC , ISB, ISB1
Item
Previous
Current
80mA
65mA
55mA
45mA
100mA
85mA
75mA
65mA
20mA
1.2mA
8ns
110mA
90mA
80mA
70mA
130mA
115mA
100mA
85mA
30mA
0.5mA
10ns
12ns
15ns
8ns
10ns
12ns
15ns
ICC(Commercial)
ICC(Industrial)
ISB
ISB1(L-ver.)
Rev. 0.4
Rev. 1.0
1. Correct AC parameters : Read & Write Cycle
2. Change Data Retention Current :
from 0.45mA to 1.1mA when Vcc=3.0V
from 0.35mA to 0.9mA when Vcc=2.0V
3. Limit L-Ver. to 48 TBGA Package
Nov.23. 2001
Dec.18. 2001
Preliminary
1. Delete 12ns,15ns speed bin.
2. Change Icc for Industrial mode.
Final
Item
Previous
100mA
85mA
Current
90mA
75mA
8ns
10ns
ICC(Industrial)
Rev. 2.0
Rev. 2.1
Rev. 2.2
Rev. 2.3
Rev. 3.0
Rev. 4.0
1. Add tBA,tBLZ,tBHZ,tBW AC parematers.
1. Correct the Package dimensions(48-TBGA)
1. Add the tPU and tPD into the waveform.
1. Change the current parameters (Isb1 L-ver, Idr)
1. Add the Lead Free Package type.
Feb. 14. 2002
Oct. 23. 2002
Mar. 10, 2003
Final
Final
Final
June. 12, 2003 Final
June. 20, 2003 Final
1. Change the Idr parameters
Mar. 15, 2004
Final
previous
1.2mA
1.8mA
Current
1.4mA
2.0mA
Idr(2V)
Idr(3V)
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev 4.0
Mar. 2004
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