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K6R1008V1A-TC20 PDF预览

K6R1008V1A-TC20

更新时间： 2023-06-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 169K
描述
Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32

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K6R1008V1A-TC20 技术参数

生命周期：Obsolete零件包装代码：TSOP2
包装说明：TSOP2,针数：32
Reach Compliance Code：unknownECCN代码：3A991.B.2.B
HTS代码：8542.32.00.41风险等级：5.31
最长访问时间：20 nsJESD-30 代码：R-PDSO-G32
长度：20.95 mm内存密度：1048576 bit
内存集成电路类型：STANDARD SRAM内存宽度：8
功能数量：1端子数量：32
字数：131072 words字数代码：128000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：128KX8
封装主体材料：PLASTIC/EPOXY封装代码：TSOP2
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
宽度：10.16 mm

K6R1008V1A-TC20 数据手册

 浏览型号K6R1008V1A-TC20的Datasheet PDF文件第2页浏览型号K6R1008V1A-TC20的Datasheet PDF文件第3页浏览型号K6R1008V1A-TC20的Datasheet PDF文件第4页浏览型号K6R1008V1A-TC20的Datasheet PDF文件第5页浏览型号K6R1008V1A-TC20的Datasheet PDF文件第6页浏览型号K6R1008V1A-TC20的Datasheet PDF文件第7页 
PRELIMINARY  
K6R1008V1A-C, K6R1008V1A-I  
CMOS SRAM  
Document Title  
128Kx8 High Speed Static RAM(3.3V Operating), Revolutionary Pin out.  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev. No.  
Rev. 0.0  
Rev. 1.0  
History  
Remark  
Draft Data  
Initial release with Design Target.  
Design Target  
Preliminary  
Jan. 18th, 1995  
Apr. 22th, 1995  
Release to Preliminary Data Sheet.  
1.1. Replace Design Target to Preliminary.  
Rev. 2.0  
Rev. 3.0  
Release to final Data Sheet.  
2.1. Delete Preliminary.  
Final  
Final  
Feb. 29th, 1996  
Jul. 16th, 1996  
Add Low Power Product and update D.C parameters.  
3.1. Add Low Power Products with ISB1=0.5mA and Data Retention  
Mode(L-ver. only).  
3.2. Update D.C parameters.  
Previous spec.  
(12/15/17/20ns part)  
170/165/160/155mA  
30mA  
Updated spec.  
(12/15/17/20ns part)  
140/135/135/130mA  
20mA  
ITEMS  
ICC  
ISB  
ISB1  
10mA  
5mA  
Rev. 4.0  
Add Industrial Temperature Range parts and 300mil 32-SOJ PKG.  
4.1. Add 32-Pin 300mil-SOJ Package.  
Final  
Jun. 2nd, 1997  
4.2. Add Industrial Temperature Range parts with the same parame-  
ters as Commercial Temperature Range parts.  
4.2.1. Add K6R1008V1A parts for Industrial Temperature Range.  
4.2.2. Add ordering information.  
4.2.3. Add the condition for operating at Industrial Temp. Range.  
4.3. Add timing diagram to define tWP as ²(Timing Wave Form of  
Write Cycle(CS=Controlled)².  
5.1. Delete L-version.  
Rev. 5.0  
5.2. Delete Data Retention Characteristics and Wavetorm.  
5.3. Delete 17ns Part.  
Final  
Feb. 25th, 1998  
5.4. Add Capacitive load of the test environment in A.C test load.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 5.0  
February 1998  
- 1 -  
12345678

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 		128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Comme
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 		128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Comme
K6R1008V1B-C12 SAMSUNG

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 		128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Comme

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